页 71 - 晶体管 - UGBT，MOSFET - 单 | 分立半导体产品 | 黑森尔电子
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晶体管 - UGBT，MOSFET - 单

记录 4,424
页  71/158
图片
零件编号
制造商
描述
封装
库存
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG8P50N120KD-EPBF
Infineon Technologies

IGBT 1200V 80A 305W TO-247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 105A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
  • Power - Max: 350W
  • Switching Energy: 2.3mJ (on), 1.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 315nC
  • Td (on/off) @ 25°C: 35ns/190ns
  • Test Condition: 600V, 35A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 170ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
封装: TO-247-3
库存5,744
1200V
80A
105A
2V @ 15V, 35A
350W
2.3mJ (on), 1.9mJ (off)
Standard
315nC
35ns/190ns
600V, 35A, 5 Ohm, 15V
170ns
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD
hot IRG4BC20K-STRRP
Infineon Technologies

IGBT 600V 16A 60W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 32A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
  • Power - Max: 60W
  • Switching Energy: 150µJ (on), 250µJ (off)
  • Input Type: Standard
  • Gate Charge: 34nC
  • Td (on/off) @ 25°C: 28ns/150ns
  • Test Condition: 480V, 9A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存140,760
600V
16A
32A
2.8V @ 15V, 9A
60W
150µJ (on), 250µJ (off)
Standard
34nC
28ns/150ns
480V, 9A, 50 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IRG4RC10SD
Infineon Technologies

IGBT 600V 14A 38W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
  • Power - Max: 38W
  • Switching Energy: 310µJ (on), 3.28mJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 76ns/815ns
  • Test Condition: 480V, 8A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 28ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存6,480
600V
14A
18A
1.8V @ 15V, 8A
38W
310µJ (on), 3.28mJ (off)
Standard
15nC
76ns/815ns
480V, 8A, 100 Ohm, 15V
28ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IRG4IBC20KD
Infineon Technologies

IGBT 600V 11.5A 34W TO220FP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 11.5A
  • Current - Collector Pulsed (Icm): 23A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
  • Power - Max: 34W
  • Switching Energy: 340µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 34nC
  • Td (on/off) @ 25°C: 54ns/180ns
  • Test Condition: 480V, 9A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 37ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220AB Full-Pak
封装: TO-220-3 Full Pack
库存3,056
600V
11.5A
23A
2.8V @ 15V, 9A
34W
340µJ (on), 300µJ (off)
Standard
34nC
54ns/180ns
480V, 9A, 50 Ohm, 15V
37ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220AB Full-Pak
RJH60M3DPE-00#J3
Renesas Electronics America

IGBT 600V 35A 113W LDPAK

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 35A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 17A
  • Power - Max: 113W
  • Switching Energy: 290µJ (on), 290µJ (off)
  • Input Type: Standard
  • Gate Charge: 60nC
  • Td (on/off) @ 25°C: 38ns/90ns
  • Test Condition: 300V, 17A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 90ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-83
  • Supplier Device Package: 4-LDPAK
封装: SC-83
库存6,704
600V
35A
-
2.3V @ 15V, 17A
113W
290µJ (on), 290µJ (off)
Standard
60nC
38ns/90ns
300V, 17A, 5 Ohm, 15V
90ns
150°C (TJ)
Surface Mount
SC-83
4-LDPAK
IXGH35N120C
IXYS

IGBT 1200V 70A 300W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 140A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 35A
  • Power - Max: 300W
  • Switching Energy: 3mJ (off)
  • Input Type: Standard
  • Gate Charge: 170nC
  • Td (on/off) @ 25°C: 50ns/150ns
  • Test Condition: 960V, 35A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封装: TO-247-3
库存4,016
1200V
70A
140A
4V @ 15V, 35A
300W
3mJ (off)
Standard
170nC
50ns/150ns
960V, 35A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IXGA24N60C
IXYS

IGBT 600V 48A 150W TO263AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): 96A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
  • Power - Max: 150W
  • Switching Energy: 240µJ (off)
  • Input Type: Standard
  • Gate Charge: 55nC
  • Td (on/off) @ 25°C: 15ns/75ns
  • Test Condition: 480V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (IXGA)
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,856
600V
48A
96A
2.5V @ 15V, 24A
150W
240µJ (off)
Standard
55nC
15ns/75ns
480V, 24A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (IXGA)
AUIRGSL30B60K
Infineon Technologies

IGBT 600V 78A 370W TO262

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 78A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
  • Power - Max: 370W
  • Switching Energy: 350µJ (on), 825µJ (off)
  • Input Type: Standard
  • Gate Charge: 102nC
  • Td (on/off) @ 25°C: 46ns/185ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: TO-262
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存2,032
600V
78A
120A
2.35V @ 15V, 30A
370W
350µJ (on), 825µJ (off)
Standard
102nC
46ns/185ns
400V, 30A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-262
IRG4PC50F-EPBF
Infineon Technologies

IGBT 600V 70A 200W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 280A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A
  • Power - Max: 200W
  • Switching Energy: 370µJ (on), 2.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 190nC
  • Td (on/off) @ 25°C: 31ns/240ns
  • Test Condition: 480V, 39A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
封装: TO-247-3
库存7,680
600V
70A
280A
1.6V @ 15V, 39A
200W
370µJ (on), 2.1mJ (off)
Standard
190nC
31ns/240ns
480V, 39A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD
IKD03N60RFAATMA1
Infineon Technologies

IGBT 600V 5A 53.6W TO252-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 5A
  • Current - Collector Pulsed (Icm): 7.5A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A
  • Power - Max: 53.6W
  • Switching Energy: 50µJ (on), 40µJ (off)
  • Input Type: Standard
  • Gate Charge: 17.1nC
  • Td (on/off) @ 25°C: 10ns/128ns
  • Test Condition: 400V, 2.5A, 68 Ohm, 15V
  • Reverse Recovery Time (trr): 31ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存3,808
600V
5A
7.5A
2.5V @ 15V, 2.5A
53.6W
50µJ (on), 40µJ (off)
Standard
17.1nC
10ns/128ns
400V, 2.5A, 68 Ohm, 15V
31ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IXA20IF1200HB
IXYS

IGBT 1200V 38A 165W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 38A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 165W
  • Switching Energy: 1.55mJ (on), 1.7mJ (off)
  • Input Type: Standard
  • Gate Charge: 47nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 600V, 15A, 56 Ohm, 15V
  • Reverse Recovery Time (trr): 350ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (HB)
封装: TO-247-3
库存3,200
1200V
38A
-
2.1V @ 15V, 15A
165W
1.55mJ (on), 1.7mJ (off)
Standard
47nC
-
600V, 15A, 56 Ohm, 15V
350ns
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (HB)
APT15GT60BRG
Microsemi Corporation

IGBT 600V 42A 184W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 42A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
  • Power - Max: 184W
  • Switching Energy: 150µJ (on), 215µJ (off)
  • Input Type: Standard
  • Gate Charge: 75nC
  • Td (on/off) @ 25°C: 6ns/105ns
  • Test Condition: 400V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封装: TO-247-3
库存6,880
600V
42A
45A
2.5V @ 15V, 15A
184W
150µJ (on), 215µJ (off)
Standard
75nC
6ns/105ns
400V, 15A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
IXGT12N120A2D1
IXYS

IGBT 1200V TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
库存7,952
1200V
-
-
-
-
-
Standard
-
-
-
-
-
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
AOK30B60D1
Alpha & Omega Semiconductor Inc.

IGBT 600V 60A 208W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 96A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 26A
  • Power - Max: 208W
  • Switching Energy: 1.1mJ (on), 240µJ (off)
  • Input Type: Standard
  • Gate Charge: 34nC
  • Td (on/off) @ 25°C: 20ns/58ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 120ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存2,576
600V
60A
96A
2.4V @ 15V, 26A
208W
1.1mJ (on), 240µJ (off)
Standard
34nC
20ns/58ns
400V, 30A, 10 Ohm, 15V
120ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
IKA10N60TXKSA1
Infineon Technologies

IGBT 600V 11.7A 30W TO220-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 11.7A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
  • Power - Max: 30W
  • Switching Energy: 430µJ
  • Input Type: Standard
  • Gate Charge: 62nC
  • Td (on/off) @ 25°C: 12ns/215ns
  • Test Condition: 400V, 10A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 115ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: PG-TO220-3
封装: TO-220-3 Full Pack
库存12,456
600V
11.7A
30A
2.05V @ 15V, 10A
30W
430µJ
Standard
62nC
12ns/215ns
400V, 10A, 23 Ohm, 15V
115ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack
PG-TO220-3
STGP7H60DF
STMicroelectronics

IGBT 600V 14A 88W TO-220AB

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 28A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A
  • Power - Max: 88W
  • Switching Energy: 99µJ (on), 100µJ (off)
  • Input Type: Standard
  • Gate Charge: 46nC
  • Td (on/off) @ 25°C: 30ns/160ns
  • Test Condition: 400V, 7A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 136ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封装: TO-220-3
库存21,912
600V
14A
28A
1.95V @ 15V, 7A
88W
99µJ (on), 100µJ (off)
Standard
46nC
30ns/160ns
400V, 7A, 47 Ohm, 15V
136ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220
AUIRGP65A40D0
Infineon Technologies

DISCRETES

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封装: TO-247-3
库存8,724
-
-
-
-
-
-
-
-
-
-
-
-
Through Hole
TO-247-3
TO-247AC
hot STGB7NC60HDT4
STMicroelectronics

IGBT 600V 25A 80W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 25A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
  • Power - Max: 80W
  • Switching Energy: 95µJ (on), 115µJ (off)
  • Input Type: Standard
  • Gate Charge: 35nC
  • Td (on/off) @ 25°C: 18.5ns/72ns
  • Test Condition: 390V, 7A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 37ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存1,154,964
600V
25A
50A
2.5V @ 15V, 7A
80W
95µJ (on), 115µJ (off)
Standard
35nC
18.5ns/72ns
390V, 7A, 10 Ohm, 15V
37ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
PCFG75T65LQF
onsemi

IGBT FIELD STOP 650V WAFER

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 60A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 830 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Wafer
封装: -
Request a Quote
650 V
-
300 A
1.5V @ 15V, 60A
-
-
Standard
830 nC
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Wafer
AIMZA75R008M1HXKSA1
Infineon Technologies

AUTOMOTIVE_SICMOS

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
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SGB8206ANSL3G
onsemi

IGBT 20A, 350V, N-CHANNEL

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 390 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A
  • Power - Max: 150 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: -
Request a Quote
390 V
20 A
-
1.9V @ 4.5V, 20A
150 W
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Logic
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Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK
IKWH50N65EH7XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 50A
  • Power - Max: 249 W
  • Switching Energy: 1.27mJ (on), 650µJ (off)
  • Input Type: Standard
  • Gate Charge: 102 nC
  • Td (on/off) @ 25°C: 19ns/147ns
  • Test Condition: 400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 76 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-32
封装: -
库存585
650 V
80 A
200 A
1.65V @ 15V, 50A
249 W
1.27mJ (on), 650µJ (off)
Standard
102 nC
19ns/147ns
400V, 50A, 10Ohm, 15V
76 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-32
RGW00TS65EHRC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 96A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 96 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
  • Power - Max: 254 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 141 nC
  • Td (on/off) @ 25°C: 50ns/183ns
  • Test Condition: 400V, 25A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 90 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
封装: -
库存1,344
650 V
96 A
200 A
1.9V @ 15V, 50A
254 W
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Standard
141 nC
50ns/183ns
400V, 25A, 10Ohm, 15V
90 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
IXYX110N120A4
IXYS

IGBT 1200V 110A GNX4 XPT PLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 375 A
  • Current - Collector Pulsed (Icm): 900 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
  • Power - Max: 1360 W
  • Switching Energy: 2.5mJ (on), 8.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 305 nC
  • Td (on/off) @ 25°C: 42ns/550ns
  • Test Condition: 600V, 50A, 1.5Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
封装: -
库存21
1200 V
375 A
900 A
1.8V @ 15V, 110A
1360 W
2.5mJ (on), 8.4mJ (off)
Standard
305 nC
42ns/550ns
600V, 50A, 1.5Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXTH)
IGTM10N40
Harris Corporation

N CHANNEL IGBT FOR SWITCHING APP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Current - Collector (Ic) (Max): 10 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
封装: -
Request a Quote
400 V
10 A
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Standard
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Through Hole
TO-204AA, TO-3
TO-3
SGH15N120RUFDTU
Fairchild Semiconductor

IGBT, 24A, 1200V, N-CHANNEL

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 24 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A
  • Power - Max: 180 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 108 nC
  • Td (on/off) @ 25°C: 20ns/60ns
  • Test Condition: 600V, 15A, 20Ohm, 15V
  • Reverse Recovery Time (trr): 100 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封装: -
Request a Quote
1200 V
24 A
45 A
3V @ 15V, 15A
180 W
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Standard
108 nC
20ns/60ns
600V, 15A, 20Ohm, 15V
100 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
HGTH12N40CID
Harris Corporation

12A, 400V, N CHANNEL IGBT WITH A

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
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SIGC18T60NCX7SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 21ns/110ns
  • Test Condition: 300V, 20A, 13Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
20 A
60 A
2.5V @ 15V, 20A
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Standard
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21ns/110ns
300V, 20A, 13Ohm, 15V
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-55°C ~ 150°C (TJ)
Surface Mount
Die
Die