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IXYS |
IGBT 600V 55A 200W TO247AD
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 55A
- Current - Collector Pulsed (Icm): 110A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
- Power - Max: 200W
- Switching Energy: 700µJ (off)
- Input Type: Standard
- Gate Charge: 100nC
- Td (on/off) @ 25°C: 30ns/90ns
- Test Condition: 480V, 30A, 4.7 Ohm, 15V
- Reverse Recovery Time (trr): 50ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXSH)
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封装: TO-247-3 |
库存390,000 |
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IXYS |
IGBT 600V TO-247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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封装: TO-247-3 |
库存2,800 |
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IXYS |
IGBT 600V 48A 150W TO268
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 48A
- Current - Collector Pulsed (Icm): 96A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
- Power - Max: 150W
- Switching Energy: 240µJ (off)
- Input Type: Standard
- Gate Charge: 55nC
- Td (on/off) @ 25°C: 15ns/75ns
- Test Condition: 480V, 24A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268
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封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存6,112 |
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IXYS |
IGBT 1200V TO-247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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封装: TO-247-3 |
库存7,632 |
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IXYS |
IGBT 1700V 75A 350W TO268
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1700V
- Current - Collector (Ic) (Max): 75A
- Current - Collector Pulsed (Icm): 200A
- Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 32A
- Power - Max: 350W
- Switching Energy: 11mJ (off)
- Input Type: Standard
- Gate Charge: 155nC
- Td (on/off) @ 25°C: 45ns/270ns
- Test Condition: 1020V, 32A, 2.7 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268
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封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存3,776 |
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IXYS |
MOD IGBT BST/CHOP 1200V ECOPAC2
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 138A
- Power - Max: 568W
- Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 125A
- Current - Collector Cutoff (Max): 5mA
- Input Capacitance (Cies) @ Vce: 5.5nF @ 25V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ECO-PAC2
- Supplier Device Package: ECO-PAC2
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封装: ECO-PAC2 |
库存5,328 |
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IXYS |
MOD IGBT SIXPACK E+
- IGBT Type: NPT
- Configuration: Three Phase
- Voltage - Collector Emitter Breakdown (Max): 1700V
- Current - Collector (Ic) (Max): 500A
- Power - Max: 2200W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 300A
- Current - Collector Cutoff (Max): 1mA
- Input Capacitance (Cies) @ Vce: 33nF @ 25V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E+
- Supplier Device Package: E+
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封装: E+ |
库存4,288 |
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IXYS |
MODULE IGBT CBI E2
- IGBT Type: Trench
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 30A
- Power - Max: 140W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
- Current - Collector Cutoff (Max): 2.7mA
- Input Capacitance (Cies) @ Vce: 1.1nF @ 25V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E2
- Supplier Device Package: E2
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封装: E2 |
库存2,320 |
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IXYS |
CONVERTER/BRAKE/INVERTER 1.9VCE
- IGBT Type: NPT
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 20A
- Power - Max: 85W
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 10A
- Current - Collector Cutoff (Max): 600µA
- Input Capacitance (Cies) @ Vce: 0.6nF @ 25V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E2
- Supplier Device Package: E2
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封装: E2 |
库存7,008 |
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IXYS |
MOSFET N-CH 100V 334A SMPD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 334A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 670nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 680W (Tc)
- Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SMPD
- Package / Case: 24-PowerSMD, 21 Leads
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封装: 24-PowerSMD, 21 Leads |
库存7,280 |
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IXYS |
MOSFET N-CH 800V 16A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 460W (Tc)
- Rds On (Max) @ Id, Vgs: 600 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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封装: TO-247-3 |
库存475,872 |
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IXYS |
MOSFET N-CH 1000V 4A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1456pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存5,536 |
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IXYS |
MOSFET N-CH 1000V 15A TO-268
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 690W (Tc)
- Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 7.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
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封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存6,704 |
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IXYS |
SCR THRYRISTOR CA 2200V WC-500
- Structure: Common Anode - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 2200V
- Current - On State (It (AV)) (Max): 545A
- Current - On State (It (RMS)) (Max): 1294A
- Voltage - Gate Trigger (Vgt) (Max): 3V
- Current - Gate Trigger (Igt) (Max): 300mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
- Current - Hold (Ih) (Max): 1A
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: WC-500
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封装: WC-500 |
库存3,696 |
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IXYS |
RECT BRIDGE 1PH 1600V ECOPAC1
- Structure: Bridge, Single Phase - SCRs/Diodes (Layout 3)
- Number of SCRs, Diodes: 2 SCRs, 2 Diodes
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 40A
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): 1V
- Current - Gate Trigger (Igt) (Max): 65mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 320A, 350A
- Current - Hold (Ih) (Max): 100mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ECO-PAC1
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封装: ECO-PAC1 |
库存4,816 |
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IXYS |
MODULE AC CONTROL 1600V ECO-PAC2
- Structure: 1-Phase Controller - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 105A
- Current - On State (It (RMS)) (Max): 180A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
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封装: Module |
库存5,600 |
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IXYS |
DIODE SCHOTTKY 40V 2A SMB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 420mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 40V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB (DO-214AA)
- Operating Temperature - Junction: -55°C ~ 150°C
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封装: DO-214AA, SMB |
库存3,472 |
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IXYS |
DIODE GEN PURP 1.2KV 60A TO247AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 60A
- Voltage - Forward (Vf) (Max) @ If: 2.66V @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 40ns
- Current - Reverse Leakage @ Vr: 650µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AD
- Operating Temperature - Junction: -55°C ~ 175°C
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封装: TO-247-2 |
库存7,536 |
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IXYS |
RECT BRIDGE 3PH 72A 1800V FO-F-B
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1800V
- Current - Average Rectified (Io): 72A
- Voltage - Forward (Vf) (Max) @ If: 1.9V @ 150A
- Current - Reverse Leakage @ Vr: 300µA @ 1800V
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: FO-F-B
- Supplier Device Package: FO-F-B
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封装: FO-F-B |
库存6,912 |
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IXYS |
IC DRVR HALF BRIDGE 4A 16-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 35 V
- Logic Voltage - VIL, VIH: 6V, 7V
- Current - Peak Output (Source, Sink): 4A, 4A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 650V
- Rise / Fall Time (Typ): 23ns, 22ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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封装: 16-SOIC (0.295", 7.50mm Width) |
库存4,512 |
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IXYS |
REVERSE CONDUCTING IGBT
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 16 A
- Current - Collector Pulsed (Icm): 40 A
- Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
- Power - Max: 150 W
- Switching Energy: 2.5mJ (off)
- Input Type: Standard
- Gate Charge: 65 nC
- Td (on/off) @ 25°C: 15ns/250ns
- Test Condition: 1360V, 10A, 10Ohm, 15V
- Reverse Recovery Time (trr): 25 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263HV
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封装: - |
库存42 |
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IXYS |
8 Amp High Temperature Sensitive
- Voltage - Off State: -
- Voltage - Gate Trigger (Vgt) (Max): -
- Current - Gate Trigger (Igt) (Max): -
- Voltage - On State (Vtm) (Max): -
- Current - On State (It (AV)) (Max): -
- Current - On State (It (RMS)) (Max): -
- Current - Hold (Ih) (Max): -
- Current - Off State (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): -
- SCR Type: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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封装: - |
Request a Quote |
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IXYS |
MOSFET N-CH 200V 220A TO264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 960W (Tc)
- Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264
- Package / Case: TO-264-3, TO-264AA
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封装: - |
库存30 |
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IXYS |
SCR 1.2KV 16A TO220ABFP
- Voltage - Off State: 1.2 kV
- Voltage - Gate Trigger (Vgt) (Max): 1.3 V
- Current - Gate Trigger (Igt) (Max): 30 mA
- Voltage - On State (Vtm) (Max): 1.14 V
- Current - On State (It (AV)) (Max): 10 A
- Current - On State (It (RMS)) (Max): 16 A
- Current - Hold (Ih) (Max): 60 mA
- Current - Off State (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A
- SCR Type: Standard Recovery
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220ABFP
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封装: - |
Request a Quote |
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IXYS |
DIODE MOD GP 1600V 200A SOT227B
- Diode Configuration: 2 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io) (per Diode): 200A
- Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 70 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 1600 V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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封装: - |
Request a Quote |
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IXYS |
MOSFET N/P-CH 100V 54A I4-PAC
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 54A (Tc), 62A (Tc)
- Rds On (Max) @ Id, Vgs: 24mOhm @ 38A, 10V, 11mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA, 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V, 104nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V, 5080pF @ 25V
- Power - Max: 89W, 132W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: ISOPLUSi5-PAK™
- Supplier Device Package: ISOPLUS i4-PAC™
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封装: - |
Request a Quote |
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IXYS |
DIODE GEN PURP 1.5KV 2340A W113
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1500 V
- Current - Average Rectified (Io): 2340A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, B-PUK
- Supplier Device Package: W113
- Operating Temperature - Junction: -
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封装: - |
Request a Quote |
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IXYS |
IGBT 1700V 75A 350W TO268
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 75 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 32A
- Power - Max: 350 W
- Switching Energy: 11mJ (off)
- Input Type: Standard
- Gate Charge: 155 nC
- Td (on/off) @ 25°C: 45ns/270ns
- Test Condition: 1020V, 32A, 2.7Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268AA
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封装: - |
库存6,666 |
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