|
|
IXYS |
IGBT 3000V 29A 240W ISOPLUSI4
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 3000V
- Current - Collector (Ic) (Max): 29A
- Current - Collector Pulsed (Icm): 240A
- Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
- Power - Max: 240W
- Switching Energy: 7.2mJ (on), 1.04mJ (off)
- Input Type: Standard
- Gate Charge: 208nC
- Td (on/off) @ 25°C: 32ns/390ns
- Test Condition: 1500V, 10A, 10 Ohm, 15V
- Reverse Recovery Time (trr): 700ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac?-5 (3 leads)
- Supplier Device Package: ISOPLUS i4-PAC?
|
封装: i4-Pac?-5 (3 leads) |
库存7,264 |
|
|
|
IXYS |
IGBT 1700V 16A 120W ISOPLUS247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1700V
- Current - Collector (Ic) (Max): 16A
- Current - Collector Pulsed (Icm): 40A
- Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 8A
- Power - Max: 120W
- Switching Energy: 900µJ (off)
- Input Type: Standard
- Gate Charge: 65nC
- Td (on/off) @ 25°C: 36ns/200ns
- Test Condition: 850V, 16A, 10 Ohm, 15V
- Reverse Recovery Time (trr): 150ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: ISOPLUS247?
- Supplier Device Package: ISOPLUS247?
|
封装: ISOPLUS247? |
库存6,944 |
|
|
|
IXYS |
IGBT 600V 75A 380W TO247AD
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 75A
- Current - Collector Pulsed (Icm): 300A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
- Power - Max: 380W
- Switching Energy: 800µJ (on), 450µJ (off)
- Input Type: Standard
- Gate Charge: 115nC
- Td (on/off) @ 25°C: 21ns/70ns
- Test Condition: 480V, 40A, 3 Ohm, 15V
- Reverse Recovery Time (trr): 25ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
|
封装: TO-247-3 |
库存475,464 |
|
|
|
IXYS |
IGBT MODULE 1200V 84A
- IGBT Type: PT
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 120A
- Power - Max: 390W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
- Current - Collector Cutoff (Max): 200µA
- Input Capacitance (Cies) @ Vce: -
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E3
- Supplier Device Package: E3
|
封装: E3 |
库存4,752 |
|
|
|
IXYS |
MOSFET N-CH 1000V 15A ISOPLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11900pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 290W (Tc)
- Rds On (Max) @ Id, Vgs: 430 mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247?
- Package / Case: ISOPLUS247?
|
封装: ISOPLUS247? |
库存6,368 |
|
|
|
IXYS |
MOSFET N-CH 600V 16A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 347W (Tc)
- Rds On (Max) @ Id, Vgs: 470 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
|
封装: TO-220-3 |
库存6,368 |
|
|
|
IXYS |
MOSFET N-CH 650V 62A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5940pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 780W (Tc)
- Rds On (Max) @ Id, Vgs: 52 mOhm @ 31A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
|
封装: TO-247-3 |
库存5,616 |
|
|
|
IXYS |
MOSFET P-CH 500V 20A TO-268
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 460W (Tc)
- Rds On (Max) @ Id, Vgs: 450 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
|
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存7,068 |
|
|
|
IXYS |
THYRISTOR PHASE 1600V ISOPLUS247
- Voltage - Off State: 1600V
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Voltage - On State (Vtm) (Max): 1.4V
- Current - On State (It (AV)) (Max): 48A
- Current - On State (It (RMS)) (Max): 75A
- Current - Hold (Ih) (Max): 200mA
- Current - Off State (Max): 10mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 140°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PLUS247?-3
|
封装: TO-247-3 |
库存6,816 |
|
|
|
IXYS |
THYRISTOR PHASE 1600V ISOPLUS247
- Voltage - Off State: 1600V
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Voltage - On State (Vtm) (Max): 1.64V
- Current - On State (It (AV)) (Max): 48A
- Current - On State (It (RMS)) (Max): 75A
- Current - Hold (Ih) (Max): 100mA
- Current - Off State (Max): 5mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 140°C
- Mounting Type: Through Hole
- Package / Case: ISOPLUS247?
- Supplier Device Package: ISOPLUS247?
|
封装: ISOPLUS247? |
库存8,472 |
|
|
|
IXYS |
MOD THYRISTOR DUAL 800V TO-240AA
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 800V
- Current - On State (It (AV)) (Max): 115A
- Current - On State (It (RMS)) (Max): 180A
- Voltage - Gate Trigger (Vgt) (Max): 2.5V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1800A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
|
封装: TO-240AA |
库存5,984 |
|
|
|
IXYS |
DIODE GEN PURP 300V 30A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.26V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 10µA @ 300V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
|
封装: TO-220-2 |
库存7,856 |
|
|
|
IXYS |
DIODE SCHOTTKY 300V 11A TO252AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io): 11A
- Voltage - Forward (Vf) (Max) @ If: 2V @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1.3mA @ 300V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
- Operating Temperature - Junction: -55°C ~ 175°C
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存2,592 |
|
|
|
IXYS |
DIODE ARRAY SCHOTTKY 250V TO263
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 250V
- Current - Average Rectified (Io) (per Diode): 18A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 7.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2mA @ 250V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存7,408 |
|
|
|
IXYS |
DIODE MODULE 1.8KV 310A Y1-CU
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1800V
- Current - Average Rectified (Io) (per Diode): 310A
- Voltage - Forward (Vf) (Max) @ If: 1.32V @ 600A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 30mA @ 1800V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Y1-CU
- Supplier Device Package: Y1-CU
|
封装: Y1-CU |
库存6,688 |
|
|
|
IXYS |
DIODE ARRAY SCHOTTKY 100V TO247
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io) (per Diode): 35A
- Voltage - Forward (Vf) (Max) @ If: 920mV @ 35A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 450µA @ 100V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
|
封装: TO-247-3 |
库存7,584 |
|
|
|
IXYS |
RECT BRIDGE 3PH 70A 1200V FO-T-A
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 70A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A
- Current - Reverse Leakage @ Vr: 500µA @ 1200V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: FO-T-A
- Supplier Device Package: FO-T-A
|
封装: FO-T-A |
库存3,904 |
|
|
|
IXYS |
DIODE BRIDGE 52A 1800V PWS-D
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1800V
- Current - Average Rectified (Io): 52A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 150A
- Current - Reverse Leakage @ Vr: 300µA @ 1800V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: PWS-D
- Supplier Device Package: PWS-D
|
封装: PWS-D |
库存2,608 |
|
|
|
IXYS |
IC LED DRIVER RGLTR 400MA 8TDFN
- Type: DC DC Regulator
- Topology: Switched Capacitor (Charge Pump)
- Internal Switch(s): Yes
- Number of Outputs: 2
- Voltage - Supply (Min): 2.7V
- Voltage - Supply (Max): 5.5V
- Voltage - Output: 6V
- Current - Output / Channel: 400mA (Flash)
- Frequency: 1MHz
- Dimming: -
- Applications: Camera Flash
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WFDFN Exposed Pad
- Supplier Device Package: 8-TDFN (2x3)
|
封装: 8-WFDFN Exposed Pad |
库存19,344 |
|
|
|
IXYS |
IC LOW SIDE DRIVER 16DIP
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 1V, 3.65V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 1200V
- Rise / Fall Time (Typ): 15ns, 15ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 16-DIP (0.300", 7.62mm)
- Supplier Device Package: 16-DIP
|
封装: 16-DIP (0.300", 7.62mm) |
库存5,856 |
|
|
|
IXYS |
DIODE SCHOTT 1.2KV 12.5A ISO247
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 12.5A
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
- Capacitance @ Vr, F: 755pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: ISO247
- Operating Temperature - Junction: -40°C ~ 150°C
|
封装: - |
Request a Quote |
|
|
|
IXYS |
3-PH. HALF CONTR. REC.BRIDGE
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1.6 kV
- Current - Average Rectified (Io): 360 A
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 360 A
- Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
|
封装: - |
Request a Quote |
|
|
|
IXYS |
SCR MODULE 1.6KV 1100A COMPACK
- Structure: Single
- Number of SCRs, Diodes: 1 SCR
- Voltage - Off State: 1.6 kV
- Current - On State (It (AV)) (Max): 1100 A
- Current - On State (It (RMS)) (Max): 1700 A
- Voltage - Gate Trigger (Vgt) (Max): 2 V
- Current - Gate Trigger (Igt) (Max): 600 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 36000A, 38900A
- Current - Hold (Ih) (Max): 600 mA
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ComPack
|
封装: - |
Request a Quote |
|
|
|
IXYS |
IGBT 1700V 80A TO268
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 42A
- Power - Max: 360 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 188 nC
- Td (on/off) @ 25°C: 37ns/340ns
- Test Condition: 850V, 42A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268
|
封装: - |
Request a Quote |
|
|
|
IXYS |
MOSFET N-CH 600V 1.4A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 9Ohm @ 700mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
|
封装: - |
Request a Quote |
|
|
|
IXYS |
SCR MODULE 1.6KV 450A E3 PACK
- Structure: -
- Number of SCRs, Diodes: 3 SCRs, 3 Diodes
- Voltage - Off State: 1.6 kV
- Current - On State (It (AV)) (Max): 450 A
- Current - On State (It (RMS)) (Max): 50 A
- Voltage - Gate Trigger (Vgt) (Max): 1.5 V
- Current - Gate Trigger (Igt) (Max): 150 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 2.4kA, 2.59kA
- Current - Hold (Ih) (Max): 200 mA
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: E3
|
封装: - |
Request a Quote |
|
|
|
IXYS |
TRIAC 1.4KV 650A Y1-2-CU
- Triac Type: Standard
- Voltage - Off State: 1.4 kV
- Current - On State (It (RMS)) (Max): 650 A
- Voltage - Gate Trigger (Vgt) (Max): 2 V
- Current - Non Rep. Surge 50, 60Hz (Itsm): 9.6kA, 10.4kA
- Current - Gate Trigger (Igt) (Max): 220 mA
- Current - Hold (Ih) (Max): 150 mA
- Configuration: Single
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y1-2-CU
- Supplier Device Package: Y1-2-CU
|
封装: - |
Request a Quote |
|
|
|
IXYS |
IXYY8N90C3 TRL
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 900 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 48 A
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 8A
- Power - Max: 125 W
- Switching Energy: 460µJ (on), 180µJ (off)
- Input Type: Standard
- Gate Charge: 13.3 nC
- Td (on/off) @ 25°C: 16ns/40ns
- Test Condition: 450V, 8A, 30Ohm, 15V
- Reverse Recovery Time (trr): 20 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
|
封装: - |
Request a Quote |
|