页 2 - Infineon Technologies 产品 - 二极管 - 整流器 - 阵列 | 黑森尔电子
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Infineon Technologies 产品 - 二极管 - 整流器 - 阵列

记录 353
页  2/13
图片
零件编号
制造商
描述
封装
库存
数量
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io) (per Diode)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Operating Temperature - Junction
Mounting Type
Package / Case
Supplier Device Package
DD1200S45KL3B5NOSA1
Infineon Technologies

DIODE MOD GP 4500V AIHV130-4

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 1200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -50°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: A-IHV130-4
封装: -
库存6
Standard
4500 V
-
3.1 V @ 1200 A
Standard Recovery >500ns, > 200mA (Io)
-
-
-50°C ~ 125°C
Chassis Mount
Module
A-IHV130-4
DD180N18SHPSA1
Infineon Technologies

DIODE MOD GP 1800V 226A BGPB34SB

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io) (per Diode): 226A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 1800 V
  • Operating Temperature - Junction: -40°C ~ 135°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB34SB-1
封装: -
Request a Quote
Standard
1800 V
226A
-
Standard Recovery >500ns, > 200mA (Io)
-
1 mA @ 1800 V
-40°C ~ 135°C
Chassis Mount
Module
BG-PB34SB-1
BAS70-04TE6327
Infineon Technologies

DIODE SCHOTTKY

  • Diode Configuration: -
  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
DD600N16KXPSA1
Infineon Technologies

DIODE MOD GP 1600V BGPB60E2A-1

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io) (per Diode): 600A
  • Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1.8 kA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 1.6 kV
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB60E2A-1
封装: -
Request a Quote
Standard
1600 V
600A
1.32 V @ 1.8 kA
Standard Recovery >500ns, > 200mA (Io)
-
40 mA @ 1.6 kV
150°C
Chassis Mount
Module
BG-PB60E2A-1
DD175N32KHPSA1
Infineon Technologies

DIODE MODULE GP 3200V 223A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3200 V
  • Current - Average Rectified (Io) (per Diode): 223A
  • Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 600 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 3200 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
Request a Quote
Standard
3200 V
223A
2.05 V @ 600 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 3200 V
-40°C ~ 150°C
Chassis Mount
Module
Module
DD89N16KAHPSA1
Infineon Technologies

DIODE MOD GP 1600V 89A POWRBLOK

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io) (per Diode): 89A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: POW-R-BLOK™ Module
  • Supplier Device Package: POW-R-BLOK™ Module
封装: -
Request a Quote
Standard
1600 V
89A
1.5 V @ 300 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1600 V
150°C
Chassis Mount
POW-R-BLOK™ Module
POW-R-BLOK™ Module
DD285N04KHPSA1
Infineon Technologies

DIODE MODULE GP 400V 285A

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io) (per Diode): 285A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 800 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 400 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
Request a Quote
Standard
400 V
285A
1.15 V @ 800 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 400 V
-40°C ~ 150°C
Chassis Mount
Module
Module
DD350N12KKHPSA1
Infineon Technologies

DIODE MODULE GP 1.2KV 350A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io) (per Diode): 350A
  • Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 1000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
Request a Quote
Standard
1200 V
350A
1.28 V @ 1000 A
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 1200 V
150°C
Chassis Mount
Module
Module
BAS40-05B5000
Infineon Technologies

DIODE ARR SCHOTT 40V 120MA SOT23

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io) (per Diode): 120mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 30 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23
封装: -
Request a Quote
Schottky
40 V
120mA (DC)
1 V @ 40 mA
No Recovery Time > 500mA (Io)
0 ns
1 µA @ 30 V
150°C
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23
DD260N18KHPSA1
Infineon Technologies

DIODE MODULE GP 1800V 260A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io) (per Diode): 260A
  • Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
Request a Quote
Standard
1800 V
260A
1.32 V @ 800 A
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 1800 V
-40°C ~ 150°C
Chassis Mount
Module
Module
DD540N26KHPSA1
Infineon Technologies

DIODE MODULE GP 2600V 540A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2600 V
  • Current - Average Rectified (Io) (per Diode): 540A
  • Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 1700 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 2600 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
Request a Quote
Standard
2600 V
540A
1.48 V @ 1700 A
Standard Recovery >500ns, > 200mA (Io)
-
40 mA @ 2600 V
-40°C ~ 150°C
Chassis Mount
Module
Module
DD350N16KHPSA1
Infineon Technologies

DIODE MODULE GP 1.6KV 350A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io) (per Diode): 350A
  • Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 1000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 1600 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
库存12
Standard
1600 V
350A
1.28 V @ 1000 A
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 1600 V
-40°C ~ 150°C
Chassis Mount
Module
Module
DDB6U215N16LHOSA1
Infineon Technologies

DIODE MODULE GP 1600V

  • Diode Configuration: 3 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: 1.61 V @ 300 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 mA @ 1600 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
库存3
Standard
1600 V
-
1.61 V @ 300 A
Standard Recovery >500ns, > 200mA (Io)
-
10 mA @ 1600 V
-40°C ~ 150°C
Chassis Mount
Module
Module
DD241S14KKHPSA1
Infineon Technologies

DIODE MODULE GP 1.4KV 261A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400 V
  • Current - Average Rectified (Io) (per Diode): 261A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 800 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 mA @ 1400 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
Request a Quote
Standard
1400 V
261A
1.55 V @ 800 A
Standard Recovery >500ns, > 200mA (Io)
-
200 mA @ 1400 V
150°C
Chassis Mount
Module
Module
DD242S10KKHPSA1
Infineon Technologies

DIODE MODULE GP 1KV 261A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io) (per Diode): 261A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 800 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 mA @ 1000 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
Request a Quote
Standard
1000 V
261A
1.55 V @ 800 A
Standard Recovery >500ns, > 200mA (Io)
-
200 mA @ 1000 V
150°C
Chassis Mount
Module
Module
DD1000S33HE3B60BOSA1
Infineon Technologies

DIODE MOD GP 3300V AGIHVB130-3

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3300 V
  • Current - Average Rectified (Io) (per Diode): 1000A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 1000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-IHVB130-3
封装: -
Request a Quote
Standard
3300 V
1000A (DC)
3.85 V @ 1000 A
Standard Recovery >500ns, > 200mA (Io)
-
-
-40°C ~ 150°C
Chassis Mount
Module
AG-IHVB130-3
DD171N12KKHPSA1
Infineon Technologies

DIODE MODULE GP 1.2KV 171A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io) (per Diode): 171A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
Request a Quote
Standard
1200 V
171A
1.26 V @ 500 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1200 V
150°C
Chassis Mount
Module
Module
DD171N12KKHPSA2
Infineon Technologies

DIODE MODULE GP 1200V 171A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io) (per Diode): 171A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
封装: -
库存18
Standard
1200 V
171A
1.26 V @ 500 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1200 V
150°C
Chassis Mount
Module
-
DD390N22SHPSA1
Infineon Technologies

DIODE MOD GP 2200V BGPB50SB

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200 V
  • Current - Average Rectified (Io) (per Diode): 390A
  • Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 800 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 2200 V
  • Operating Temperature - Junction: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB50SB-1
封装: -
库存3
Standard
2200 V
390A
1.34 V @ 800 A
Standard Recovery >500ns, > 200mA (Io)
-
1 mA @ 2200 V
-40°C ~ 125°C
Chassis Mount
Module
BG-PB50SB-1
DD340N16SHPSA1
Infineon Technologies

DIODE MODULE GP 1.6KV 330A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io) (per Diode): 330A
  • Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 1600 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 1600 V
  • Operating Temperature - Junction: -40°C ~ 130°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
Request a Quote
Standard
1600 V
330A
1.31 V @ 1600 A
Standard Recovery >500ns, > 200mA (Io)
-
1 mA @ 1600 V
-40°C ~ 130°C
Chassis Mount
Module
Module
DD250S65K3C1NPSA1
Infineon Technologies

DIODE MOD GP 6500V 250A AIHV130

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 6500 V
  • Current - Average Rectified (Io) (per Diode): 250A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 250 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -50°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: A-IHV130-6
封装: -
Request a Quote
Standard
6500 V
250A (DC)
3.5 V @ 250 A
Standard Recovery >500ns, > 200mA (Io)
-
-
-50°C ~ 125°C
Chassis Mount
Module
A-IHV130-6
DD200S33K2CNOSA1
Infineon Technologies

DIODE MODULE GP 3300V AIHV73-3

  • Diode Configuration: -
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3300 V
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: A-IHV73-3
封装: -
Request a Quote
Standard
3300 V
-
3.5 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
-
-40°C ~ 125°C
Chassis Mount
Module
A-IHV73-3
DD104N12KAHPSA1
Infineon Technologies

DIODE MOD GP 1200V 104A POWRBLOK

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io) (per Diode): 104A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 300 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: POW-R-BLOK™ Module
  • Supplier Device Package: POW-R-BLOK™ Module
封装: -
Request a Quote
Standard
1200 V
104A
1.4 V @ 300 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1200 V
150°C
Chassis Mount
POW-R-BLOK™ Module
POW-R-BLOK™ Module
DD171N14KHPSA1
Infineon Technologies

DIODE MODULE GP 1.4KV 171A

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400 V
  • Current - Average Rectified (Io) (per Diode): 171A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1400 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
Request a Quote
Standard
1400 V
171A
1.26 V @ 500 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1400 V
-40°C ~ 150°C
Chassis Mount
Module
Module
DD800S45KL3B5NPSA1
Infineon Technologies

DIODE MODULE GP 4500V 800A

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io) (per Diode): 800A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 800 A
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -50°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
库存6
Standard
4500 V
800A (DC)
3.1 V @ 800 A
-
-
-
-50°C ~ 125°C
Chassis Mount
Module
Module
DD600N12KHPSA2
Infineon Technologies

DIODE MODULE GP 1.2KV 600A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io) (per Diode): 600A
  • Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1800 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 1200 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
Request a Quote
Standard
1200 V
600A
1.32 V @ 1800 A
Standard Recovery >500ns, > 200mA (Io)
-
40 mA @ 1200 V
-40°C ~ 150°C
Chassis Mount
Module
Module
BAV70E6767
Infineon Technologies

DIODE ARRAY GP 80V 200MA

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io) (per Diode): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 150 nA @ 70 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: -
封装: -
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Standard
80 V
200mA (DC)
1.25 V @ 150 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
150 nA @ 70 V
150°C
Surface Mount
TO-236-3, SC-59, SOT-23-3
-
DD600N16KAHPSA1
Infineon Technologies

DIODE MOD GP 1600V 600A BGPB60-1

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io) (per Diode): 600A
  • Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1800 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 1600 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB60-1
封装: -
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Standard
1600 V
600A
1.32 V @ 1800 A
Standard Recovery >500ns, > 200mA (Io)
-
40 mA @ 1600 V
150°C
Chassis Mount
Module
BG-PB60-1