页 3 - Infineon Technologies 产品 - 二极管 - 整流器 - 阵列 | 黑森尔电子
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Infineon Technologies 产品 - 二极管 - 整流器 - 阵列

记录 353
页  3/13
图片
零件编号
制造商
描述
封装
库存
数量
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io) (per Diode)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Operating Temperature - Junction
Mounting Type
Package / Case
Supplier Device Package
DD89N14KHPSA1
Infineon Technologies

DIODE MODULE GP 1400V 89A

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400 V
  • Current - Average Rectified (Io) (per Diode): 89A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1400 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
库存39
Standard
1400 V
89A
1.5 V @ 300 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1400 V
-40°C ~ 150°C
Chassis Mount
Module
Module
DD89N14KHPSA2
Infineon Technologies

DIODE MODULE GP 1400V 89A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400 V
  • Current - Average Rectified (Io) (per Diode): 89A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1.4 kV
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
Request a Quote
Standard
1400 V
89A
1.5 V @ 300 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1.4 kV
150°C
Chassis Mount
Module
Module
DD82S08KKHPSA1
Infineon Technologies

DIODE MODULE GP 800V 96A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io) (per Diode): 96A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 300 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 800 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
Request a Quote
Standard
800 V
96A
1.55 V @ 300 A
Standard Recovery >500ns, > 200mA (Io)
-
40 mA @ 800 V
150°C
Chassis Mount
Module
Module
DD171N08KHPSA1
Infineon Technologies

DIODE MODULE GP 800V 171A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io) (per Diode): 171A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 800 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
Request a Quote
Standard
800 V
171A
1.26 V @ 500 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 800 V
150°C
Chassis Mount
Module
Module
DD260N12KHPSA1
Infineon Technologies

DIODE MODULE GP 1.2KV 260A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io) (per Diode): 260A
  • Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
Request a Quote
Standard
1200 V
260A
1.32 V @ 800 A
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 1200 V
-40°C ~ 150°C
Chassis Mount
Module
Module
DD98N25KHPSA1
Infineon Technologies

DIODE MODULE GP 2500V 98A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2500 V
  • Current - Average Rectified (Io) (per Diode): 98A
  • Voltage - Forward (Vf) (Max) @ If: 1.53 V @ 300 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25 mA @ 2500 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
Request a Quote
Standard
2500 V
98A
1.53 V @ 300 A
Standard Recovery >500ns, > 200mA (Io)
-
25 mA @ 2500 V
-40°C ~ 150°C
Chassis Mount
Module
Module
DD340N22STIMHPSA1
Infineon Technologies

DIODE MOD GP 2200V BGPB50SB

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200 V
  • Current - Average Rectified (Io) (per Diode): 330A
  • Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 800 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 2200 V
  • Operating Temperature - Junction: 130°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB50SB-1
封装: -
库存6
Standard
2200 V
330A
1.31 V @ 800 A
Standard Recovery >500ns, > 200mA (Io)
-
1 mA @ 2200 V
130°C
Chassis Mount
Module
BG-PB50SB-1
BAS40-06WE6327
Infineon Technologies

DIODE ARR SCHOT 40V 120MA SOT323

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io) (per Diode): 120mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 30 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3-1
封装: -
Request a Quote
Schottky
40 V
120mA (DC)
1 V @ 40 mA
Small Signal =< 200mA (Io), Any Speed
-
1 µA @ 30 V
150°C
Surface Mount
SC-70, SOT-323
PG-SOT323-3-1
BAS70-05B5000
Infineon Technologies

DIODE ARR SCHOT 70V 70MA SOT23-3

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70 V
  • Current - Average Rectified (Io) (per Diode): 70mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 nA @ 50 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3-3
封装: -
Request a Quote
Schottky
70 V
70mA (DC)
1 V @ 15 mA
Small Signal =< 200mA (Io), Any Speed
-
100 nA @ 50 V
150°C
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3-3
BAS70-05B5003
Infineon Technologies

DIODE ARR SCHOT 70V 70MA SOT23-3

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70 V
  • Current - Average Rectified (Io) (per Diode): 70mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 nA @ 50 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3-3
封装: -
Request a Quote
Schottky
70 V
70mA (DC)
1 V @ 15 mA
Small Signal =< 200mA (Io), Any Speed
-
100 nA @ 50 V
150°C
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3-3
DDB6U144N16RBOSA1
Infineon Technologies

DIODE MODULE GP 1600V

  • Diode Configuration: 3 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 150 A
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
库存9
Standard
1600 V
-
1.65 V @ 150 A
-
-
5 mA @ 1600 V
-40°C ~ 150°C
Chassis Mount
Module
Module
DDB6U205N16LHOSA1
Infineon Technologies

DIODE MODULE GP 1600V

  • Diode Configuration: 3 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: 1.47 V @ 200 A
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 mA @ 1600 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
库存6
Standard
1600 V
-
1.47 V @ 200 A
-
-
10 mA @ 1600 V
-40°C ~ 150°C
Chassis Mount
Module
Module
DD98N24KS5HPSA1
Infineon Technologies

DIODE MOD GP 2400V 98A POWRBLOK

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2400 V
  • Current - Average Rectified (Io) (per Diode): 98A
  • Voltage - Forward (Vf) (Max) @ If: 1.53 V @ 300 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25 mA @ 2400 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: POW-R-BLOK™ Module
  • Supplier Device Package: POW-R-BLOK™ Module
封装: -
Request a Quote
Standard
2400 V
98A
1.53 V @ 300 A
Standard Recovery >500ns, > 200mA (Io)
-
25 mA @ 2400 V
150°C
Chassis Mount
POW-R-BLOK™ Module
POW-R-BLOK™ Module
DD400S45KL3B5NOSA1
Infineon Technologies

DIODE MOD GP 4500V AIHV130-4

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 400 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -50°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: A-IHV130-4
封装: -
库存6
Standard
4500 V
-
3.1 V @ 400 A
Standard Recovery >500ns, > 200mA (Io)
-
-
-50°C ~ 125°C
Chassis Mount
Module
A-IHV130-4
DD171N18KHPSA2
Infineon Technologies

DIODE MODULE GP 1800V 171A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io) (per Diode): 171A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1800 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
封装: -
库存39
Standard
1800 V
171A
1.26 V @ 500 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1800 V
150°C
Chassis Mount
Module
-
DD171N18KHPSA1
Infineon Technologies

DIODE MODULE GP 1800V 171A

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io) (per Diode): 171A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1800 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
Request a Quote
Standard
1800 V
171A
1.26 V @ 500 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1800 V
-40°C ~ 150°C
Chassis Mount
Module
Module
IDFW80C65D1XKSA1
Infineon Technologies

DIODE ARRAY GP 650V 74A TO247-3

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io) (per Diode): 74A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 40 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 73 ns
  • Current - Reverse Leakage @ Vr: 40 µA @ 650 V
  • Operating Temperature - Junction: -40°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-AI
封装: -
库存90
Standard
650 V
74A
1.7 V @ 40 A
Fast Recovery =< 500ns, > 200mA (Io)
73 ns
40 µA @ 650 V
-40°C ~ 175°C
Through Hole
TO-247-3
PG-TO247-3-AI
BAT64-06WE6327
Infineon Technologies

DIODE ARR SCHOT 40V 120MA SOT323

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io) (per Diode): 120mA
  • Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 30 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
封装: -
Request a Quote
Schottky
40 V
120mA
750 mV @ 100 mA
Small Signal =< 200mA (Io), Any Speed
5 ns
2 µA @ 30 V
150°C
Surface Mount
SC-70, SOT-323
SOT-323
DD340N20SHPSA1
Infineon Technologies

DIODE MOD GP 2000V BGPB50SB

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000 V
  • Current - Average Rectified (Io) (per Diode): 330A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 2000 V
  • Operating Temperature - Junction: -40°C ~ 135°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB50SB-1
封装: -
Request a Quote
Standard
2000 V
330A
-
Standard Recovery >500ns, > 200mA (Io)
-
1 mA @ 2000 V
-40°C ~ 135°C
Chassis Mount
Module
BG-PB50SB-1
DD600N16KHPSA3
Infineon Technologies

DIODE MODULE GP 1.6KV 600A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io) (per Diode): 600A
  • Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1800 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 1600 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
库存9
Standard
1600 V
600A
1.32 V @ 1800 A
Standard Recovery >500ns, > 200mA (Io)
-
40 mA @ 1600 V
-40°C ~ 150°C
Chassis Mount
Module
Module
DD400S33K2CNOSA1
Infineon Technologies

DIODE MOD GP 3300V AIHV130-3

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3300 V
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 400 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: A-IHV130-3
封装: -
Request a Quote
Standard
3300 V
-
3.5 V @ 400 A
Standard Recovery >500ns, > 200mA (Io)
-
-
-40°C ~ 125°C
Chassis Mount
Module
A-IHV130-3
BAT64-06B5003
Infineon Technologies

DIODE ARR SCHOTT 40V 120MA SOT23

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io) (per Diode): 120mA
  • Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 30 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3-3
封装: -
Request a Quote
Schottky
40 V
120mA
750 mV @ 100 mA
Small Signal =< 200mA (Io), Any Speed
5 ns
2 µA @ 30 V
150°C
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3-3
BAT64-06B5000
Infineon Technologies

DIODE ARR SCHOTT 40V 120MA SOT23

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io) (per Diode): 120mA
  • Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 30 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3-3
封装: -
Request a Quote
Schottky
40 V
120mA
750 mV @ 100 mA
Small Signal =< 200mA (Io), Any Speed
5 ns
2 µA @ 30 V
150°C
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3-3
DDB6U145N16LHOSA1
Infineon Technologies

DIODE MODULE GP 1600V

  • Diode Configuration: 3 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 150 A
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
Request a Quote
Standard
1600 V
-
1.43 V @ 150 A
-
-
5 mA @ 1600 V
-40°C ~ 150°C
Chassis Mount
Module
Module
DD380N16AHPSA1
Infineon Technologies

DIODE MODULE GP 1.6KV 380A

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io) (per Diode): 380A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25 mA @ 1600 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
库存9
Standard
1600 V
380A
1.4 V @ 1500 A
Standard Recovery >500ns, > 200mA (Io)
-
25 mA @ 1600 V
-40°C ~ 150°C
Chassis Mount
Module
Module
DD260N12KAHPSA1
Infineon Technologies

DIODE MODULE GP 1.2KV 260A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io) (per Diode): 260A
  • Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
Request a Quote
Standard
1200 V
260A
1.32 V @ 800 A
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 1200 V
150°C
Chassis Mount
Module
Module
BAS70-04WE6327
Infineon Technologies

DIODE ARR SCHOTT 70V 70MA SOT323

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70 V
  • Current - Average Rectified (Io) (per Diode): 70mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 100 ps
  • Current - Reverse Leakage @ Vr: 100 nA @ 50 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3-1
封装: -
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Schottky
70 V
70mA (DC)
1 V @ 15 mA
Small Signal =< 200mA (Io), Any Speed
100 ps
100 nA @ 50 V
150°C
Surface Mount
SC-70, SOT-323
PG-SOT323-3-1
DD104N14KHPSA1
Infineon Technologies

DIODE MODULE GP 1.4KV 104A

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400 V
  • Current - Average Rectified (Io) (per Diode): 104A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 300 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1400 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
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Standard
1400 V
104A
1.4 V @ 300 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1400 V
-40°C ~ 150°C
Chassis Mount
Module
Module