Infineon Technologies 产品

IRG4BC30F

Infineon Technologies

IGBT 600V 31A 100W TO220AB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 31A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
• Power - Max: 100W
• Switching Energy: 230µJ (on), 1.18mJ (off)
• Input Type: Standard
• Gate Charge: 51nC
• Td (on/off) @ 25°C: 21ns/200ns
• Test Condition: 480V, 17A, 23 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封装: TO-220-3

IKW40N65F5FKSA1

Infineon Technologies

IGBT 650V 74A 255W PG-TO247-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 74A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
• Power - Max: 255W
• Switching Energy: 360µJ (on), 100µJ (off)
• Input Type: Standard
• Gate Charge: 95nC
• Td (on/off) @ 25°C: 19ns/160ns
• Test Condition: 400V, 20A, 15 Ohm, 15V
• Reverse Recovery Time (trr): 60ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

封装: TO-247-3

AUIRFR3504

Infineon Technologies

MOSFET N-CH 40V 87A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 140W (Tc)
• Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-PAK (TO-252AA)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF7702TRPBF

Infineon Technologies

MOSFET P-CH 12V 8A 8-TSSOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 81nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 3470pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Tc)
• Rds On (Max) @ Id, Vgs: 14 mOhm @ 8A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-TSSOP
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)

封装: 8-TSSOP (0.173", 4.40mm Width)

BSL211SP

Infineon Technologies

MOSFET P-CH 20V 4.7A 6-TSOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 654pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 67 mOhm @ 4.7A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: P-TSOP6-6
• Package / Case: SOT-23-6 Thin, TSOT-23-6

封装: SOT-23-6 Thin, TSOT-23-6

IRFR3707TRR

Infineon Technologies

MOSFET N-CH 30V 61A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 87W (Tc)
• Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

IRFBA1404PPBF

Infineon Technologies

MOSFET N-CH 40V 206A SUPER-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 206A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 95A, 10V
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: SUPER-220? (TO-273AA)
• Package / Case: Super-220?-3 (Straight Leads)

封装: Super-220?-3 (Straight Leads)

IRF5305STRRPBF

Infineon Technologies

MOSFET P-CH 55V 31A D2PAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
• Rds On (Max) @ Id, Vgs: 60 mOhm @ 16A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFH5250TRPBF

Infineon Technologies

MOSFET N-CH 25V 45A PQFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7174pF @ 13V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.6W (Ta), 160W (Tc)
• Rds On (Max) @ Id, Vgs: 1.15 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PQFN (5x6)
• Package / Case: 8-PowerVDFN

封装: 8-PowerVDFN

PTFA211801EV5T350XWSA1

Infineon Technologies

IC RF FET LDMOS H-36260-2

• Transistor Type: -
• Frequency: -
• Gain: -
• Voltage - Test: -
• Current Rating: -
• Noise Figure: -
• Current - Test: -
• Power - Output: -
• Voltage - Rated: -
• Package / Case: -
• Supplier Device Package: -

封装: -

BAS21UE6327HTSA1

Infineon Technologies

DIODE ARRAY GP 200V 250MA SC74-6

• Diode Configuration: 3 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io) (per Diode): 250mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 100nA @ 200V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: SC-74, SOT-457
• Supplier Device Package: PG-SC74-6

封装: SC-74, SOT-457

TLE4284DV50NTMA1

Infineon Technologies

IC REG LINEAR 5V 1A TO252-3

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 40V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.4V @ 1A
• Current - Output: 1A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 1.6mA
• PSRR: 65dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3-11

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

IRU1030-33CT

Infineon Technologies

IC REG LINEAR 3.3V 3A TO220AB

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 7V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.3V @ 3A
• Current - Output: 3A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 10mA
• PSRR: 70dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: 0°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封装: TO-220-3

IR25750LTRPBF

Infineon Technologies

IC CURRENT SENSE SOT23-5

• Applications: Current Sensing - MOSFET, IGBT
• Current - Supply: 50µA
• Voltage - Supply: -
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SOT-23-5

封装: SC-74A, SOT-753

TLE6216G

Infineon Technologies

IC LOW SIDE SWITCH 4CHAN PDSO-20

• Switch Type: General Purpose
• Number of Outputs: 4
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 4.8 V ~ 32 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 3A, 5A
• Rds On (Typ): 200 mOhm, 350 mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
• Supplier Device Package: PG-DSO-20-37

封装: 20-PowerSOIC (0.433", 11.00mm Width)

BTS7740GNUMA1

Infineon Technologies

IC SW TRILITHIC D210MOHM PDSO28

• Output Configuration: Half Bridge (2)
• Applications: DC Motors, General Purpose
• Interface: Logic
• Load Type: Inductive
• Technology: DMOS
• Rds On (Typ): 100 mOhm LS, 110 mOhm HS
• Current - Output / Channel: -
• Current - Peak Output: 8A
• Voltage - Supply: 1.8 V ~ 42 V
• Voltage - Load: 1.8 V ~ 42 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: Status Flag
• Fault Protection: ESD, Over Temperature, Short Circuit, UVLO
• Mounting Type: Surface Mount
• Package / Case: 28-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: P-DSO-28

封装: 28-SOIC (0.295", 7.50mm Width)

PSB 21553 E V1.4-G

Infineon Technologies

IC INCA-IP PHONE 324-LBGA

• Function: Single-Chip IP-Phone Solution
• Interface: -
• Number of Circuits: -
• Voltage - Supply: -
• Current - Supply: -
• Power (Watts): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 324-LBGA
• Supplier Device Package: PG-LBGA-324-3

封装: 324-LBGA

PSB 21383 H V1.3

Infineon Technologies

IC CODEC W/TRANSCEIVER MQFP-44

• Function: CODEC
• Interface: IOM-2, Parallel, SCI
• Number of Circuits: 1
• Voltage - Supply: 3.3V, 5V
• Current - Supply: 27mA
• Power (Watts): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 44-QFP
• Supplier Device Package: P-MQFP-44

封装: 44-QFP

SAF-XC858CA-16FFI AC

Infineon Technologies

IC MCU 8BIT 64KB FLASH 64LQFP

• Core Processor: XC800
• Core Size: 8-Bit
• Speed: 24MHz
• Connectivity: SSC, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number of I/O: 40
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 3.25K x 8
• Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 64-LQFP
• Supplier Device Package: 64-LQFP (10x10)

封装: 64-LQFP

TC1766192F80HLBDKXUMA2

Infineon Technologies

IC MCU 32BIT 1.5MB FLASH 176LQFP

• Core Processor: TriCore?
• Core Size: 32-Bit
• Speed: 80MHz
• Connectivity: ASC, CAN, MLI, MSC, SSC
• Peripherals: DMA, POR, WDT
• Number of I/O: 81
• Program Memory Size: 1.5MB (1.5M x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 108K x 8
• Voltage - Supply (Vcc/Vdd): 1.42 V ~ 1.58 V
• Data Converters: A/D 2x10b, 32x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 176-LQFP
• Supplier Device Package: 176-LQFP (24x24)

封装: 176-LQFP

TLE49645MXTMA1

Infineon Technologies

IC HALL EFFECT UNIPOLAR SOT23-3

• Function: -
• Technology: -
• Polarization: -
• Sensing Range: -
• Test Condition: -
• Voltage - Supply: -
• Current - Supply (Max): -
• Current - Output (Max): -
• Output Type: -
• Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

封装: -

ICE3B0365

Infineon Technologies

OFF-LINE SMPS CURRENT MODE CONTR

• Output Isolation: -
• Internal Switch(s): -
• Voltage - Breakdown: -
• Topology: -
• Voltage - Start Up: -
• Voltage - Supply (Vcc/Vdd): -
• Duty Cycle: -
• Frequency - Switching: -
• Power (Watts): -
• Fault Protection: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -
• Mounting Type: -

封装: -

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IRFH5110TR2PBF

Infineon Technologies

MOSFET N-CH 100V 5X6 PQFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 63A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 4V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3152 pF @ 25 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 12.4mOhm @ 37A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: 8-PQFN (5x6)
• Package / Case: 8-PowerVDFN

封装: -

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T1930N36TOFVTXPSA1

Infineon Technologies

SCR MODULE 3800V 4200A DO200AE

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 3.8 kV
• Current - On State (It (AV)) (Max): 2180 A
• Current - On State (It (RMS)) (Max): 4200 A
• Voltage - Gate Trigger (Vgt) (Max): 3 V
• Current - Gate Trigger (Igt) (Max): 300 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: DO-200AE

封装: -

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CYT4DNJBRCQ1BZSGS

Infineon Technologies

IC MCU 32BIT 6.188MB FLSH 327BGA

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
• Core Size: 32-Bit Quad-Core
• Speed: 320MHz
• Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
• Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
• Number of I/O: 168
• Program Memory Size: 6.188MB (6.188M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 128K x 8
• RAM Size: 640K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 327-BGA
• Supplier Device Package: 327-BGA

封装: -

2PS12017E34W32132NOSA1

Infineon Technologies

MODULE IGBT STACK A-PS4-1

• IGBT Type: -
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -25°C ~ 55°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封装: -

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CY8C4147LQS-S243

Infineon Technologies

IC MCU 32BIT 128KB FLASH 40QFN

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 24MHz
• Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, Temp Sensor, WDT
• Number of I/O: 34
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b, 20x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 40-UFQFN Exposed Pad
• Supplier Device Package: 40-QFN (6x6)

封装: -

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SIGC15T60EX1SA1

Infineon Technologies

IGBT TRENCH FS 600V 30A DIE

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 30 A
• Current - Collector Pulsed (Icm): 90 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封装: -

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