Infineon Technologies 产品

IRG8P08N120KDPBF

Infineon Technologies

IGBT 1200V 15A 89W TO-247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 15A
• Current - Collector Pulsed (Icm): 15A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
• Power - Max: 89W
• Switching Energy: 300µJ (on), 300µJ (off)
• Input Type: Standard
• Gate Charge: 45nC
• Td (on/off) @ 25°C: 20ns/160ns
• Test Condition: 600V, 5A, 47 Ohm, 15V
• Reverse Recovery Time (trr): 50ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

封装: TO-247-3

BSP171PL6327HTSA1

Infineon Technologies

MOSFET P-CH 60V 1.9A SOT-223

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 460µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta)
• Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT223-4
• Package / Case: TO-261-4, TO-261AA

封装: TO-261-4, TO-261AA

IRF6636TR1PBF

Infineon Technologies

MOSFET N-CH 20V 18A DIRECTFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 81A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.45V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
• Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 18A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DIRECTFET? ST
• Package / Case: DirectFET? Isometric ST

封装: DirectFET? Isometric ST

IRF7423TR

Infineon Technologies

MOSFET N-CH 30V 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

IRFSL7730PBF

Infineon Technologies

MOSFET N-CH 75V 195A TO262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.7V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 407nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 13660pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 375W (Tc)
• Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

BSO065N03MSGXUMA1

Infineon Technologies

MOSFET N-CH 30V 13A 8DSO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.56W (Ta)
• Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 16A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-DSO-8
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

BF2040WE6814HTSA1

Infineon Technologies

MOSFET N-CH 8V 40MA SOT-343

• Transistor Type: N-Channel
• Frequency: 800MHz
• Gain: 23dB
• Voltage - Test: 5V
• Current Rating: 40mA
• Noise Figure: 1.6dB
• Current - Test: 15mA
• Power - Output: -
• Voltage - Rated: 8V
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: PG-SOT343-4

封装: SC-82A, SOT-343

PTRA093302FCV1R0XTMA1

Infineon Technologies

IC RF FET LDMOS 330W H-37248-4

• Transistor Type: LDMOS
• Frequency: 768MHz
• Gain: 17.25dB
• Voltage - Test: 48V
• Current Rating: 10µA
• Noise Figure: -
• Current - Test: 400mA
• Power - Output: 79W
• Voltage - Rated: 105V
• Package / Case: H-37248-4
• Supplier Device Package: H-37248-4

封装: H-37248-4

BFN24E6327HTSA1

Infineon Technologies

TRANS NPN 250V 0.2A SOT-23

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 250V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
• Power - Max: 360mW
• Frequency - Transition: 70MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

封装: TO-236-3, SC-59, SOT-23-3

BAT6202WH6327XTSA1

Infineon Technologies

DIODE SCHOTTKY 40V 20MA SCD80

• Diode Type: Schottky - Single
• Voltage - Peak Reverse (Max): 40V
• Current - Max: 20mA
• Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
• Resistance @ If, F: -
• Power Dissipation (Max): 100mW
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-80
• Supplier Device Package: PG-SCD80-2

封装: SC-80

SDB06S60

Infineon Technologies

DIODE SCHOTTKY 600V 6A D2PAK

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 6A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 200µA @ 600V
• Capacitance @ Vr, F: 300pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK
• Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRU1260CPTR

Infineon Technologies

IC CONV PENTIUM P55C 7-UTHINPAK

• Applications: Converter, Intel Pentium?, P55C
• Voltage - Input: 3 V ~ 7 V
• Number of Outputs: 2
• Voltage - Output: 1.2 V ~ 5.5 V
• Operating Temperature: 0°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 7-Ultra Thin-Pak
• Supplier Device Package: 7-Ultra Thin-Pak?

封装: 7-Ultra Thin-Pak

TLE4250GNTSA1

Infineon Technologies

IC REG LINEAR 50MA SCT595

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 50mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD (5 Leads), Gull Wing
• Supplier Device Package: PG-SCT-595

封装: 6-SMD (5 Leads), Gull Wing

BTN7970PAKSA1

Infineon Technologies

IC MOTOR DRIVER PAR TO220-7

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge
• Interface: Parallel
• Technology: Power MOSFET
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 70A
• Voltage - Supply: 8 V ~ 18 V
• Voltage - Load: 8 V ~ 18 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-7 (Formed Leads)
• Supplier Device Package: PG-TO220-7

封装: TO-220-7 (Formed Leads)

KX161CJ16F40FBBNT

Infineon Technologies

IC MCU 16BIT 128KB FLASH

• Core Processor: C166SV2
• Core Size: 16-Bit
• Speed: 40MHz
• Connectivity: CAN, EBI/EMI, I2C, SLDM, SPI, UART/USART
• Peripherals: PWM, WDT
• Number of I/O: 99
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 8K x 8
• Voltage - Supply (Vcc/Vdd): 2.35 V ~ 2.7 V
• Data Converters: A/D 12x8/10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

PVT422P-T

Infineon Technologies

IC RELAY PHOTOVO 400V 120MA THIN

• Circuit: DPST (2 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 35 Ohm
• Load Current: 120mA
• Voltage - Input: 1.2VDC
• Voltage - Load: 0 ~ 400 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 8-SMD (0.300", 7.62mm)
• Supplier Device Package: Thin-Pak
• Relay Type: Relay

封装: 8-SMD (0.300", 7.62mm)

TLE9252VLCXUMA1

Infineon Technologies

TRANSCEIVER

• Type: -
• Protocol: -
• Number of Drivers/Receivers: -
• Duplex: -
• Receiver Hysteresis: -
• Data Rate: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

2ED2778S01GXTMA1

Infineon Technologies

2ED2778S01GXTMA1

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: N-Channel MOSFET
• Voltage - Supply: 7V ~ 18V
• Logic Voltage - VIL, VIH: 0.8V, 2V
• Current - Peak Output (Source, Sink): 4A, 8A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 140 V
• Rise / Fall Time (Typ): 24ns, 12ns
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 10-VFDFN Exposed Pad
• Supplier Device Package: PG-VSON-10-5

封装: -

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CY15V116QSN-108BKXIT

Infineon Technologies

FRAM

• Memory Type: Non-Volatile
• Memory Format: FRAM
• Technology: FRAM (Ferroelectric RAM)
• Memory Size: 16Mbit
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 108 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 6.7 ns
• Voltage - Supply: 1.71V ~ 1.89V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-FBGA (6x8)

封装: -

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FP50R07U1E4BPSA1

Infineon Technologies

IGBT MODULE 650V 75A 230W

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 75 A
• Power - Max: 230 W
• Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封装: -

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CY15V104QN50BFXITXUMA1

Infineon Technologies

FRAM

• Memory Type: Non-Volatile
• Memory Format: FRAM
• Technology: FRAM (Ferroelectric RAM)
• Memory Size: 4Mbit
• Memory Interface: SPI
• Clock Frequency: 50 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 8 ns
• Voltage - Supply: 1.71V ~ 1.89V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-UFLGA
• Supplier Device Package: 8-UFLGA (3.28x3.23)

封装: -

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IQD063N15NM5CGATMA1

Infineon Technologies

TRENCH >=100V

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150 V
• Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), 148A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
• Vgs(th) (Max) @ Id: 4.6V @ 159µA
• Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
• Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TTFN-9-U02
• Package / Case: 9-PowerTDFN

封装: -

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EUFDZ0332-CY

Infineon Technologies

INFINEON

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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FF400R33KF2CB3NOSA1

Infineon Technologies

IGBT MOD 3300V 660A AIHV130-3

• IGBT Type: -
• Configuration: 2 Independent
• Voltage - Collector Emitter Breakdown (Max): 3300 V
• Current - Collector (Ic) (Max): 660 A
• Power - Max: 4800 W
• Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 400A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 50 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: A-IHV130-3

封装: -

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CY8C4245AZS-M445

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
• Number of I/O: 51
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 4K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 24x12b SAR; D/A 4x7/8b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (10x10)

封装: -

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IRF7380TRPBFXTMA1

Infineon Technologies

PLANAR 40<-<100V

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

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IPW60R165CPFKSA1

Infineon Technologies

MOSFET N-CH 600V 21A TO247-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 790µA
• Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 192W (Tc)
• Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-3-1
• Package / Case: TO-247-3

封装: -

D650N06TXPSA1

Infineon Technologies

DIODE GEN PURP 600V 650A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 650A
• Voltage - Forward (Vf) (Max) @ If: 950 mV @ 450 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20 mA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AA, A-PUK
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 180°C

封装: -

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