页 74 - Toshiba Semiconductor and Storage 产品

零件编号	制造商	描述	封装	库存
TPC6011(TE85L,F,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 6A VS6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VS-6 (2.9x2.8) Package / Case: SOT-23-6 Thin, TSOT-23-6	封装: SOT-23-6 Thin, TSOT-23-6	库存3,920
2SK3565(Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 900V 5A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	封装: TO-220-3 Full Pack	库存5,120
TK25E60X,S1X	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 25A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	封装: TO-220-3	库存6,036
TK12A50E,S4X	Toshiba Semiconductor and Storage	MOSFET N-CH 500V TO220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 520 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack, Isolated Tab	封装: TO-220-3 Full Pack, Isolated Tab	库存5,760
TPN1R603PL,L1Q	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 10V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 80A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	封装: 8-PowerVDFN	库存3,152
TPH4R606NH,L1Q	Toshiba Semiconductor and Storage	MOSFET N CH 60V 32A 8-SOP ADV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs(th) (Max) @ Id: 4V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3965pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 16A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	封装: 8-PowerVDFN	库存46,470
TPCP8203(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET 2N-CH 40V 4.7A PS-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.7A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 360mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: PS-8 (2.9x2.4)	封装: 8-SMD, Flat Lead	库存4,896
2SA2154CT-Y(TPL3)	Toshiba Semiconductor and Storage	TRANS PNP 50V 0.1A Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	封装: SC-101, SOT-883	库存7,648
DSF01S30SL,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 100MA SL2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 30V Capacitance @ Vr, F: 9.02pF @ 2V, 1MHz Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Supplier Device Package: SL2 Operating Temperature - Junction: 125°C (Max)	封装: 0201 (0603 Metric)	库存6,432
TA78L005AP,WNLF(J	Toshiba Semiconductor and Storage	IC REG LINEAR 150MA LSTM Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 150mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -30°C ~ 85°C Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	封装: TO-226-3, TO-92-3 Long Body	库存3,456
TA58L08S(FJTN,QM)	Toshiba Semiconductor and Storage	IC REG LINEAR 250MA LSTM Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 250mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 105°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: LSTM	封装: TO-220-3 Full Pack	库存6,352
TB6549HQ(O)	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PAR 25HZIP Motor Type - Stepper: - Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (2) Interface: PWM, Serial Technology: Bi-CMOS Step Resolution: - Applications: General Purpose Current - Output: 4.5A Voltage - Supply: 10 V ~ 27 V Voltage - Load: 10 V ~ 27 V Operating Temperature: -20°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 25-SIP, Formed Leads Supplier Device Package: 25-HZIP	封装: 25-SIP, Formed Leads	库存5,008
TC78S600FNG,C,ELHZ	Toshiba Semiconductor and Storage	IC STEP MOTOR DRVR PAR 20SSOP Motor Type - Stepper: Bipolar Motor Type - AC, DC: - Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel Technology: Power MOSFET Step Resolution: 1/2, 1/4, 1/8, 1/16 Applications: General Purpose Current - Output: 800mA Voltage - Supply: 2.7 V ~ 5.5 V Voltage - Load: 2.5 V ~ 15 V Operating Temperature: -20°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-LSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-SSOP	封装: 20-LSSOP (0.173", 4.40mm Width)	库存16,926
TC75W59FU,LF	Toshiba Semiconductor and Storage	IC COMP GP CMOS DUAL SM8 Type: General Purpose Number of Elements: 2 Output Type: Open Drain Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V Voltage - Input Offset (Max): 1mV @ 5V Current - Input Bias (Max): 1pA @ 5V Current - Output (Typ): 25mA Current - Quiescent (Max): 220µA CMRR, PSRR (Typ): - Propagation Delay (Max): 200ns Hysteresis: - Operating Temperature: -40°C ~ 85°C Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Supplier Device Package: SM8	封装: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)	库存2,528
TC75W55FU,LF	Toshiba Semiconductor and Storage	IC OPAMP GP 160KHZ SM8-8 Amplifier Type: General Purpose Number of Circuits: 2 Output Type: - Slew Rate: 0.08 V/µs Gain Bandwidth Product: 160kHz -3db Bandwidth: - Current - Input Bias: 1pA Voltage - Input Offset: 2mV Current - Supply: 20µA Current - Output / Channel: - Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Supplier Device Package: SM8	封装: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)	库存24,960
TLBF1100C(T11(O	Toshiba Semiconductor and Storage	LED BLUE 2SMD Color: Blue Configuration: - Lens Color: - Lens Transparency: - Millicandela Rating: 300mcd Lens Style/Size: Oval with Flat Top Voltage - Forward (Vf) (Typ): 3.2V Current - Test: 20mA Viewing Angle: - Mounting Type: Surface Mount Wavelength - Dominant: 470nm Wavelength - Peak: 468nm Features: - Package / Case: 2-SMD, J-Lead Supplier Device Package: SMD Size / Dimension: 3.20mm L x 2.90mm W Height (Max): 2.10mm	封装: 2-SMD, J-Lead	库存2,556
TLP171A(F	Toshiba Semiconductor and Storage	PHOTORELAY SPST-NO 400MA 60V Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 2 Ohm Load Current: 400mA Voltage - Input: 1.27VDC Voltage - Load: 0 ~ 60 V Mounting Type: Surface Mount Termination Style: Gull Wing Package / Case: 4-SOP (0.173", 4.40mm) Supplier Device Package: 4-SOP (2.54mm) Relay Type: Relay	封装: 4-SOP (0.173", 4.40mm)	库存5,634
TLP293(BLL-TPL,E	Toshiba Semiconductor and Storage	OPTOISOLATOR 3.75KV TRANS 4-SO Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 200% @ 500µA Current Transfer Ratio (Max): 400% @ 500µA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Package / Case: 4-SOIC (0.179", 4.55mm) Supplier Device Package: 4-SO	封装: 4-SOIC (0.179", 4.55mm)	库存8,910
74HC08D	Toshiba Semiconductor and Storage	IC GATE AND 4CH 2-INP 14SOIC Logic Type: AND Gate Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 2 V ~ 6 V Current - Quiescent (Max): 1µA Current - Output High, Low: 5.2mA, 5.2mA Logic Level - Low: 0.5 V ~ 1.8 V Logic Level - High: 1.5 V ~ 4.2 V Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: 14-SOIC Package / Case: 14-SOIC (0.154", 3.90mm Width)	封装: 14-SOIC (0.154", 3.90mm Width)	库存4,656
TMP89FS60FG(Z	Toshiba Semiconductor and Storage	8 BIT MCU, PB-F TLCS870/C1 FAMIL Core Processor: - Core Size: - Speed: - Connectivity: - Peripherals: - Number of I/O: - Program Memory Size: - Program Memory Type: - EEPROM Size: - RAM Size: - Voltage - Supply (Vcc/Vdd): - Data Converters: - Oscillator Type: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,792
TCR2LN20,LF	Toshiba Semiconductor and Storage	200MA LDO VOUT=2.0V DROPOUT=200M Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 2V Voltage - Output (Max): - Voltage Dropout (Max): 0.54V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): 2µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	封装: 4-XFDFN Exposed Pad	库存94,872
CMG05-TE12L-Q-M	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 1A M-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C	封装: -	Request a Quote
2SA1943-O-S1-F	Toshiba Semiconductor and Storage	PB-F POWER TRANSISTOR TO-3PL PC= Transistor Type: PNP Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 230 V Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V Power - Max: 150 W Frequency - Transition: 30MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PL Supplier Device Package: TO-3P(L)	封装: -	库存30
TK5P65W-RQ	Toshiba Semiconductor and Storage	PB-F POWER MOSFET TRANSISTOR DPA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 170µA Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 1.22Ohm @ 2.6A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	库存5,961
CMS15I40A-TE12L-QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1.5A M-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: 62pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: 150°C (Max)	封装: -	库存9,000
RN2101-LXHF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A SSM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	封装: -	库存17,949
7UL2G02FK-LF-B	Toshiba Semiconductor and Storage	L-MOS LVP IC VCC: 2.3V-3.6V, SOT Logic Type: NOR Gate Number of Circuits: 2 Number of Inputs: 2 Features: - Voltage - Supply: 0.9V ~ 3.6V Current - Quiescent (Max): 1 µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.7V ~ 0.8V Logic Level - High: 1.7V ~ 2V Max Propagation Delay @ V, Max CL: 5.3ns @ 3.3V, 30pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: US8 Package / Case: 8-VFSOP (0.091", 2.30mm Width)	封装: -	Request a Quote
TPCP8107-LF	Toshiba Semiconductor and Storage	MOSFET P-CH 40V 8A PS-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 44.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 10 V Vgs (Max): +10V, -20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 4A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: PS-8 Package / Case: 8-SMD, Flat Lead	封装: -	库存11,598

TPC6011(TE85L,F,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 6A VS6

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 20 mOhm @ 3A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: VS-6 (2.9x2.8)
Package / Case: SOT-23-6 Thin, TSOT-23-6

封装: SOT-23-6 Thin, TSOT-23-6

库存3,920

2SK3565(Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 900V 5A TO-220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

库存5,120

TK25E60X,S1X

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 25A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 300V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 125 mOhm @ 7.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

封装: TO-220-3

库存6,036

TK12A50E,S4X

Toshiba Semiconductor and Storage

MOSFET N-CH 500V TO220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 520 mOhm @ 6A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack, Isolated Tab

封装: TO-220-3 Full Pack, Isolated Tab

库存5,760

TPN1R603PL,L1Q

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 10V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 80A, 10V
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Package / Case: 8-PowerVDFN

封装: 8-PowerVDFN

库存3,152

TPH4R606NH,L1Q

Toshiba Semiconductor and Storage

MOSFET N CH 60V 32A 8-SOP ADV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs(th) (Max) @ Id: 4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3965pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 16A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

封装: 8-PowerVDFN

库存46,470

TPCP8203(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET 2N-CH 40V 4.7A PS-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 360mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: PS-8 (2.9x2.4)

封装: 8-SMD, Flat Lead

库存4,896

2SA2154CT-Y(TPL3)

Toshiba Semiconductor and Storage

TRANS PNP 50V 0.1A

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3

封装: SC-101, SOT-883

库存7,648

DSF01S30SL,L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 100MA SL2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 30V
Capacitance @ Vr, F: 9.02pF @ 2V, 1MHz
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Supplier Device Package: SL2
Operating Temperature - Junction: 125°C (Max)

封装: 0201 (0603 Metric)

库存6,432

TA78L005AP,WNLF(J

Toshiba Semiconductor and Storage

IC REG LINEAR 150MA LSTM

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 150mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -30°C ~ 85°C
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: LSTM

封装: TO-226-3, TO-92-3 Long Body

库存3,456

TA58L08S(FJTN,QM)

Toshiba Semiconductor and Storage

IC REG LINEAR 250MA LSTM

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 250mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 105°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: LSTM

封装: TO-220-3 Full Pack

库存6,352

TB6549HQ(O)

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 25HZIP

Motor Type - Stepper: -
Motor Type - AC, DC: Brushed DC
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (2)
Interface: PWM, Serial
Technology: Bi-CMOS
Step Resolution: -
Applications: General Purpose
Current - Output: 4.5A
Voltage - Supply: 10 V ~ 27 V
Voltage - Load: 10 V ~ 27 V
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 25-SIP, Formed Leads
Supplier Device Package: 25-HZIP

封装: 25-SIP, Formed Leads

库存5,008

TC78S600FNG,C,ELHZ

Toshiba Semiconductor and Storage

IC STEP MOTOR DRVR PAR 20SSOP

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: -
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: Parallel
Technology: Power MOSFET
Step Resolution: 1/2, 1/4, 1/8, 1/16
Applications: General Purpose
Current - Output: 800mA
Voltage - Supply: 2.7 V ~ 5.5 V
Voltage - Load: 2.5 V ~ 15 V
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-LSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-SSOP

封装: 20-LSSOP (0.173", 4.40mm Width)

库存16,926

TC75W59FU,LF

Toshiba Semiconductor and Storage

IC COMP GP CMOS DUAL SM8

Type: General Purpose
Number of Elements: 2
Output Type: Open Drain
Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V
Voltage - Input Offset (Max): 1mV @ 5V
Current - Input Bias (Max): 1pA @ 5V
Current - Output (Typ): 25mA
Current - Quiescent (Max): 220µA
CMRR, PSRR (Typ): -
Propagation Delay (Max): 200ns
Hysteresis: -
Operating Temperature: -40°C ~ 85°C
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Supplier Device Package: SM8

封装: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

库存2,528

TC75W55FU,LF

Toshiba Semiconductor and Storage

IC OPAMP GP 160KHZ SM8-8

Amplifier Type: General Purpose
Number of Circuits: 2
Output Type: -
Slew Rate: 0.08 V/µs
Gain Bandwidth Product: 160kHz
-3db Bandwidth: -
Current - Input Bias: 1pA
Voltage - Input Offset: 2mV
Current - Supply: 20µA
Current - Output / Channel: -
Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Supplier Device Package: SM8

封装: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

库存24,960

TLBF1100C(T11(O

Toshiba Semiconductor and Storage

LED BLUE 2SMD

Color: Blue
Configuration: -
Lens Color: -
Lens Transparency: -
Millicandela Rating: 300mcd
Lens Style/Size: Oval with Flat Top
Voltage - Forward (Vf) (Typ): 3.2V
Current - Test: 20mA
Viewing Angle: -
Mounting Type: Surface Mount
Wavelength - Dominant: 470nm
Wavelength - Peak: 468nm
Features: -
Package / Case: 2-SMD, J-Lead
Supplier Device Package: SMD
Size / Dimension: 3.20mm L x 2.90mm W
Height (Max): 2.10mm

封装: 2-SMD, J-Lead

库存2,556

TLP171A(F

Toshiba Semiconductor and Storage

PHOTORELAY SPST-NO 400MA 60V

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 2 Ohm
Load Current: 400mA
Voltage - Input: 1.27VDC
Voltage - Load: 0 ~ 60 V
Mounting Type: Surface Mount
Termination Style: Gull Wing
Package / Case: 4-SOP (0.173", 4.40mm)
Supplier Device Package: 4-SOP (2.54mm)
Relay Type: Relay

封装: 4-SOP (0.173", 4.40mm)

库存5,634

TLP293(BLL-TPL,E

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS 4-SO

Number of Channels: 1
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 500µA
Current Transfer Ratio (Max): 400% @ 500µA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 4-SOIC (0.179", 4.55mm)
Supplier Device Package: 4-SO

封装: 4-SOIC (0.179", 4.55mm)

库存8,910

74HC08D

Toshiba Semiconductor and Storage

IC GATE AND 4CH 2-INP 14SOIC

Logic Type: AND Gate
Number of Circuits: 4
Number of Inputs: 2
Features: -
Voltage - Supply: 2 V ~ 6 V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 5.2mA, 5.2mA
Logic Level - Low: 0.5 V ~ 1.8 V
Logic Level - High: 1.5 V ~ 4.2 V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: 14-SOIC
Package / Case: 14-SOIC (0.154", 3.90mm Width)

封装: 14-SOIC (0.154", 3.90mm Width)

库存4,656

TMP89FS60FG(Z

Toshiba Semiconductor and Storage

8 BIT MCU, PB-F TLCS870/C1 FAMIL

Core Processor: -
Core Size: -
Speed: -
Connectivity: -
Peripherals: -
Number of I/O: -
Program Memory Size: -
Program Memory Type: -
EEPROM Size: -
RAM Size: -
Voltage - Supply (Vcc/Vdd): -
Data Converters: -
Oscillator Type: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,792

TCR2LN20,LF

Toshiba Semiconductor and Storage

200MA LDO VOUT=2.0V DROPOUT=200M

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 2V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.54V @ 150mA
Current - Output: 200mA
Current - Quiescent (Iq): 2µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-SDFN (0.8x0.8)

封装: 4-XFDFN Exposed Pad

库存94,872

CMG05-TE12L-Q-M

Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 1A M-FLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C

封装: -

Request a Quote

2SA1943-O-S1-F

Toshiba Semiconductor and Storage

PB-F POWER TRANSISTOR TO-3PL PC=

Transistor Type: PNP
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Power - Max: 150 W
Frequency - Transition: 30MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PL
Supplier Device Package: TO-3P(L)

封装: -

库存30

TK5P65W-RQ

Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DPA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 2.6A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

库存5,961

CMS15I40A-TE12L-QM

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 1.5A M-FLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Capacitance @ Vr, F: 62pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: 150°C (Max)

封装: -

库存9,000

RN2101-LXHF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

封装: -

库存17,949

7UL2G02FK-LF-B

Toshiba Semiconductor and Storage

L-MOS LVP IC VCC: 2.3V-3.6V, SOT

Logic Type: NOR Gate
Number of Circuits: 2
Number of Inputs: 2
Features: -
Voltage - Supply: 0.9V ~ 3.6V
Current - Quiescent (Max): 1 µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.7V ~ 0.8V
Logic Level - High: 1.7V ~ 2V
Max Propagation Delay @ V, Max CL: 5.3ns @ 3.3V, 30pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: US8
Package / Case: 8-VFSOP (0.091", 2.30mm Width)

封装: -

Request a Quote

TPCP8107-LF

Toshiba Semiconductor and Storage

MOSFET P-CH 40V 8A PS-8

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 44.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 10 V
Vgs (Max): +10V, -20V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 4A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: PS-8
Package / Case: 8-SMD, Flat Lead

封装: -

库存11,598