页 75 - Toshiba Semiconductor and Storage 产品 | 黑森尔电子
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Toshiba Semiconductor and Storage 产品

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TK8Q60W,S1VQ
Toshiba Semiconductor and Storage

MOSFET N CH 600V 8A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 400µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 300V
  • Vgs (Max): ±30V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 80W (Tc)
  • Rds On (Max) @ Id, Vgs: 500 mOhm @ 4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Stub Leads, IPak
封装: TO-251-3 Stub Leads, IPak
库存3,216
TK14G65W5,RQ
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 13.7A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 690µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 300V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.9A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存14,070
2SC2655-Y,T6SWFF(M
Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
封装: TO-226-3, TO-92-3 Long Body
库存3,360
2SA1020-Y(F,M)
Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
封装: TO-226-3, TO-92-3 Long Body
库存5,264
RN2402S,LF(D
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.2W S-MINI

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
封装: TO-236-3, SC-59, SOT-23-3
库存6,656
RN1107CT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.05W CST3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 50mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
封装: SC-101, SOT-883
库存6,496
RN2301,LF
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W USM

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
封装: SC-70, SOT-323
库存23,376
RN1970FE(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
封装: SOT-563, SOT-666
库存4,688
hot CRZ47(TE85L,Q)
Toshiba Semiconductor and Storage

DIODE ZENER 47V 700MW SFLAT

  • Voltage - Zener (Nom) (Vz): 47V
  • Tolerance: ±10%
  • Power - Max: 700mW
  • Impedance (Max) (Zzt): 65 Ohms
  • Current - Reverse Leakage @ Vr: 10µA @ 37.6V
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: S-FLAT (1.6x3.5)
封装: SOD-123F
库存26,136
CLH03(TE16R,Q)
Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 3A L-FLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A (DC)
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: L-FLAT?
  • Supplier Device Package: L-FLAT? (4x5.5)
  • Operating Temperature - Junction: -
封装: L-FLAT?
库存3,392
1SS309(TE85L,F)
Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA SMV

  • Diode Configuration: 4 Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io) (per Diode): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 500nA @ 80V
  • Operating Temperature - Junction: 125°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
封装: SC-74A, SOT-753
库存6,880
TCR2EF31,LM
Toshiba Semiconductor and Storage

IC REG LINEAR 3.1V 200MA SMV

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 3.1V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 200mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 60µA
  • PSRR: 73dB (1kHz)
  • Control Features: Enable
  • Protection Features: Over Current
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
封装: SC-74A, SOT-753
库存7,456
TBD62308AFAG,EHZ
Toshiba Semiconductor and Storage

IC LOAD SWITCH 24SSOP

  • Switch Type: General Purpose
  • Number of Outputs: 4
  • Ratio - Input:Output: 1:1
  • Output Configuration: Low Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 50V (Max)
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 1.5A
  • Rds On (Typ): 370 mOhm
  • Input Type: Inverting
  • Features: -
  • Fault Protection: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 24-SOP (0.236", 6.00mm Width)
  • Supplier Device Package: 24-SSOP
封装: 24-SOP (0.236", 6.00mm Width)
库存18,342
TC7SHU04FU5LJFT
Toshiba Semiconductor and Storage

IC INVERTER UNBUFFER HS SSOP5

  • Logic Type: Inverter
  • Number of Circuits: 1
  • Number of Inputs: 1
  • Features: -
  • Voltage - Supply: 2 V ~ 5.5 V
  • Current - Quiescent (Max): 2µA
  • Current - Output High, Low: 8mA, 8mA
  • Logic Level - Low: 0.3V
  • Logic Level - High: 1.7V
  • Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: USV
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
封装: 5-TSSOP, SC-70-5, SOT-353
库存5,072
TC7W08FU,LF
Toshiba Semiconductor and Storage

IC GATE AND 2CH 2-INP SM8

  • Logic Type: AND Gate
  • Number of Circuits: 2
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 2 V ~ 6 V
  • Current - Quiescent (Max): 1µA
  • Current - Output High, Low: 5.2mA, 5.2mA
  • Logic Level - Low: 0.5 V ~ 1.8 V
  • Logic Level - High: 1.5 V ~ 4.2 V
  • Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SM8
  • Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
封装: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
库存27,084
74LCX125FT(AE)
Toshiba Semiconductor and Storage

IC BUS BUFFER QDLV N-INV 14TSSOP

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 4
  • Number of Bits per Element: 1
  • Input Type: -
  • Output Type: Push-Pull
  • Current - Output High, Low: 24mA, 24mA
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 14-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 14-TSSOP
封装: 14-TSSOP (0.173", 4.40mm Width)
库存3,632
74HC540D(BJ)
Toshiba Semiconductor and Storage

IC BUFFER INVERT 6V 20SOIC

  • Logic Type: Buffer, Inverting
  • Number of Elements: 1
  • Number of Bits per Element: 8
  • Input Type: -
  • Output Type: Push-Pull
  • Current - Output High, Low: 7.8mA, 7.8mA
  • Voltage - Supply: 2 V ~ 6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 20-SOIC
封装: 20-SOIC (0.295", 7.50mm Width)
库存22,776
TC7PCI3412MT,LF
Toshiba Semiconductor and Storage

IC MUX/DEMUX 2:1 DIFF PCI 42TQFN

  • Applications: PCIe
  • Multiplexer/Demultiplexer Circuit: 2:1
  • Switch Circuit: SPDT
  • Number of Channels: 8
  • On-State Resistance (Max): 13.5 Ohm
  • Voltage - Supply, Single (V+): 3 V ~ 3.6 V
  • Voltage - Supply, Dual (V±): -
  • -3db Bandwidth: 10GHz
  • Features: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 42-UFQFN Exposed Pad
  • Supplier Device Package: 42-TQFN (9x3.5)
封装: 42-UFQFN Exposed Pad
库存6,432
TL19W01-N(T32
Toshiba Semiconductor and Storage

LED COOL WHITE 5000K 65CRI 2SMD

  • Color: White, Cool
  • CCT (K): 5000K (4750K ~ 5300K)
  • Flux @ 85°C, Current - Test: -
  • Flux @ 25°C, Current - Test: 120 lm (100 lm ~ 140 lm)
  • Current - Test: 300mA
  • Voltage - Forward (Vf) (Typ): 3.3V
  • Lumens/Watt @ Current - Test: 121 lm/W
  • CRI (Color Rendering Index): 65
  • Current - Max: 350mA
  • Viewing Angle: 140°
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: 3138
  • Size / Dimension: 0.150" L x 0.122" W (3.80mm x 3.10mm)
  • Height - Seated (Max): 0.030" (0.75mm)
封装: 2-SMD, No Lead
库存4,698
TLP3555(TP1,F)
Toshiba Semiconductor and Storage

PHOTORELAY SPST-NO 2A 60V

  • Circuit: SPST-NO (1 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 200 mOhm
  • Load Current: 2A
  • Voltage - Input: 1.33VDC
  • Voltage - Load: 0 ~ 60 V
  • Mounting Type: Surface Mount
  • Termination Style: Gull Wing
  • Package / Case: 4-SMD (0.300", 7.62mm)
  • Supplier Device Package: 4-SMD
  • Relay Type: Relay
封装: 4-SMD (0.300", 7.62mm)
库存2,934
TLP281-4(GB-TP,J,F
Toshiba Semiconductor and Storage

OPTOISO 2.5KV 4CH TRANS 16-SOP

  • Number of Channels: 4
  • Voltage - Isolation: 2500Vrms
  • Current Transfer Ratio (Min): 100% @ 5mA
  • Current Transfer Ratio (Max): 600% @ 5mA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.15V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 400mV
  • Operating Temperature: -55°C ~ 100°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 16-SOP
封装: 16-SOIC (0.173", 4.40mm Width)
库存8,838
TLP183(BL-TPL,E
Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 4 LEAD

  • Number of Channels: 1
  • Voltage - Isolation: 3750Vrms
  • Current Transfer Ratio (Min): 200% @ 5mA
  • Current Transfer Ratio (Max): 600% @ 5mA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.25V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 300mV
  • Operating Temperature: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD (4 Leads), Gull Wing
  • Supplier Device Package: 6-SO, 4 Lead
封装: 6-SMD (4 Leads), Gull Wing
库存7,290
TLP2200(TP1,F)
Toshiba Semiconductor and Storage

OPTOISO 2.5KV TRI-STATE 8SMD

  • Number of Channels: 1
  • Inputs - Side 1/Side 2: 1/0
  • Voltage - Isolation: 2500Vrms
  • Common Mode Transient Immunity (Min): 1kV/µs
  • Input Type: DC
  • Output Type: Tri-State
  • Current - Output / Channel: 25mA
  • Data Rate: 2.5MBd
  • Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
  • Rise / Fall Time (Typ): 35ns, 20ns
  • Voltage - Forward (Vf) (Typ): 1.55V
  • Current - DC Forward (If) (Max): 10mA
  • Voltage - Supply: 4.5 V ~ 20 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Gull Wing
  • Supplier Device Package: 8-SMD
封装: 8-SMD, Gull Wing
库存5,310
hot TLP351(F)
Toshiba Semiconductor and Storage

OPTOISO 3.75KV GATE DRIVER 8DIP

  • Technology: Optical Coupling
  • Number of Channels: 1
  • Voltage - Isolation: 3750Vrms
  • Common Mode Transient Immunity (Min): 10kV/µs
  • Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
  • Pulse Width Distortion (Max): -
  • Rise / Fall Time (Typ): 50ns, 50ns
  • Current - Output High, Low: 400mA, 400mA
  • Current - Peak Output: 600mA
  • Voltage - Forward (Vf) (Typ): 1.55V
  • Current - DC Forward (If) (Max): 20mA
  • Voltage - Supply: 10 V ~ 30 V
  • Operating Temperature: -40°C ~ 100°C
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
  • Approvals: -
封装: 8-DIP (0.300", 7.62mm)
库存15,312
TC78B025FTG,EL
Toshiba Semiconductor and Storage

BRUSHLESS MOTOR DRIVER IC FOR SE

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: -
  • Function: -
  • Output Configuration: -
  • Interface: -
  • Technology: -
  • Step Resolution: -
  • Applications: -
  • Current - Output: -
  • Voltage - Supply: -
  • Voltage - Load: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 24-VFQFN Exposed Pad
  • Supplier Device Package: 24-VQFN (4x4)
封装: 24-VFQFN Exposed Pad
库存6,512
RN4989-TE85L-F
Toshiba Semiconductor and Storage

NPN + PNP BRT Q1BSR=47KOHM Q1BER

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47kOhms
  • Resistor - Emitter Base (R2) (Ohms): 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz, 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
封装: -
库存594
SSM6P35AFE-LF
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.25A ES6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 1.2V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V
  • Power - Max: 150mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
封装: -
库存23,136
TCR3UM11A-LF-SE
Toshiba Semiconductor and Storage

LDO REG IOUT: 300MA VIN: 6V VOUT

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 1.1V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.957V @ 300mA
  • Current - Output: 300mA
  • Current - Quiescent (Iq): 580 nA
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: Current Limit, Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-UDFN Exposed Pad
  • Supplier Device Package: 4-DFN (1x1)
封装: -
库存29,373