页 62 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品 | 黑森尔电子
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晶体管 - FET，MOSFET - 阵列

记录 5,684
页  62/190
图片
零件编号
制造商
描述
封装
库存
数量
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot PMDPB70EN,115
Nexperia USA Inc.

MOSFET 2N-CH 30V 3.5A 6DFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 57 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 15V
  • Power - Max: 510mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020-6
封装: 6-UDFN Exposed Pad
库存174,000
Logic Level Gate
30V
3.5A
57 mOhm @ 3.5A, 10V
2.5V @ 250µA
4.5nC @ 10V
130pF @ 15V
510mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
DFN2020-6
SSM6L11TU(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.5A UF6 S

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA
  • Rds On (Max) @ Id, Vgs: 145 mOhm @ 250MA, 4V
  • Vgs(th) (Max) @ Id: 1.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: UF6
封装: 6-SMD, Flat Leads
库存3,456
Logic Level Gate
20V
500mA
145 mOhm @ 250MA, 4V
1.1V @ 100µA
-
268pF @ 10V
500mW
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
UF6
SI9926BDY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 6.2A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.2A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.14W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存3,600
Logic Level Gate
20V
6.2A
20 mOhm @ 8.2A, 4.5V
1.5V @ 250µA
20nC @ 4.5V
-
1.14W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI7940DP-T1-E3
Vishay Siliconix

MOSFET 2N-CH 12V 7.6A PPAK SO-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
封装: PowerPAK? SO-8 Dual
库存20,436
Logic Level Gate
12V
7.6A
17 mOhm @ 11.8A, 4.5V
1.5V @ 250µA
17nC @ 4.5V
-
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
hot SI7842DP-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 6.3A PPAK SO-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.3A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
封装: PowerPAK? SO-8 Dual
库存1,159,212
Logic Level Gate
30V
6.3A
22 mOhm @ 7.5A, 10V
2.4V @ 250µA
20nC @ 10V
-
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
hot FDJ1027P
Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 2.8A SC-75

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 2.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC75-6 FLMP
  • Supplier Device Package: SC75-6 FLMP
封装: SC75-6 FLMP
库存204,432
Logic Level Gate
20V
2.8A
160 mOhm @ 2.8A, 4.5V
1.5V @ 250µA
4nC @ 4.5V
290pF @ 10V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
SC75-6 FLMP
SC75-6 FLMP
SP8M5TB
Rohm Semiconductor

MOSFET N/P-CH 30V 6A/7A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A, 7A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: 8-SOIC (0.154", 3.90mm Width)
库存6,080
Logic Level Gate
30V
6A, 7A
30 mOhm @ 6A, 10V
2.5V @ 1mA
7.2nC @ 5V
520pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot IRFH7911TRPBF
Infineon Technologies

MOSFET 2N-CH 30V 13A/28A PQFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A, 28A
  • Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V
  • Power - Max: 2.4W, 3.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 18-PowerVQFN
  • Supplier Device Package: PQFN (5x6)
封装: 18-PowerVQFN
库存115,224
Logic Level Gate
30V
13A, 28A
8.6 mOhm @ 12A, 10V
2.35V @ 25µA
12nC @ 4.5V
1060pF @ 15V
2.4W, 3.4W
-55°C ~ 150°C (TJ)
Surface Mount
18-PowerVQFN
PQFN (5x6)
APTM60A11FT1G
Microsemi Corporation

MOSFET 2N-CH 600V 40A SP1

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 40A
  • Rds On (Max) @ Id, Vgs: 132 mOhm @ 33A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10552pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
封装: SP1
库存6,448
Standard
600V
40A
132 mOhm @ 33A, 10V
5V @ 2.5mA
330nC @ 10V
10552pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
ALD1101BSAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8SOIC

  • FET Type: 2 N-Channel (Dual) Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 40mA
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: 8-SOIC (0.154", 3.90mm Width)
库存3,376
Standard
10.6V
40mA
-
-
-
-
500mW
0°C ~ 70°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot NTJD5121NT1G
ON Semiconductor

MOSFET 2N-CH 60V 0.295A SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 295mA
  • Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
封装: 6-TSSOP, SC-88, SOT-363
库存2,930,520
Logic Level Gate
60V
295mA
1.6 Ohm @ 500mA, 10V
2.5V @ 250µA
0.9nC @ 4.5V
26pF @ 20V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
FDMD8240LET40
Fairchild/ON Semiconductor

MOSFET 2N-CH 40V 24A POWER3.3X5

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 24A
  • Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 23A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 20V
  • Power - Max: 50W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-PowerWDFN
  • Supplier Device Package: 12-Power3.3x5
封装: 12-PowerWDFN
库存3,376
Standard
40V
24A
2.6 mOhm @ 23A, 10V
3V @ 250µA
56nC @ 10V
4230pF @ 20V
50W
-55°C ~ 175°C (TJ)
Surface Mount
12-PowerWDFN
12-Power3.3x5
hot QS6K1TR
Rohm Semiconductor

MOSFET 2N-CH 30V 1A TSMT6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1A
  • Rds On (Max) @ Id, Vgs: 238 mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 10V
  • Power - Max: 1.25W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSMT6 (SC-95)
封装: SOT-23-6 Thin, TSOT-23-6
库存578,508
Logic Level Gate
30V
1A
238 mOhm @ 1A, 4.5V
1.5V @ 1mA
2.4nC @ 4.5V
77pF @ 10V
1.25W
150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSMT6 (SC-95)
QH8KA3TCR
Rohm Semiconductor

MOSFET 2N-CH 30V 9A TSMT8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
  • Power - Max: 1.5W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
封装: -
库存8,760
-
30V
9A (Ta)
16mOhm @ 9A, 10V
2.5V @ 1mA
15.5nC @ 10V
640pF @ 15V
1.5W (Ta)
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
IAUC60N04S6N031HATMA1
Infineon Technologies

MOSFET 2N-CH 40V 60A 8TDSON

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
  • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1922pF @ 25V
  • Power - Max: 75W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-56
封装: -
库存28,929
-
40V
60A (Tj)
3.1mOhm @ 30A, 10V
3V @ 25µA
30nC @ 10V
1922pF @ 25V
75W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-56
NVMJD2D7N04CLTWG
onsemi

MOSFET N-CH 40V LFPAK56

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
AOCA32112E
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 4.5A 4ALPHADFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: 4-AlphaDFN (0.97x0.97)
封装: -
Request a Quote
-
20V
4.5A (Ta)
48mOhm @ 3A, 4.5V
1.3V @ 250µA
11.5nC @ 4.5V
-
1.1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, No Lead
4-AlphaDFN (0.97x0.97)
AONH36328
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 13.8A/18A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13.8A (Ta), 18A (Tc)
  • Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
  • Power - Max: 2.5W (Ta), 23W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-DFN-EP (3x3)
封装: -
Request a Quote
-
30V
13.8A (Ta), 18A (Tc)
8.5mOhm @ 20A, 10V
2.1V @ 250µA
20nC @ 10V
700pF @ 15V
2.5W (Ta), 23W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-WDFN Exposed Pad
8-DFN-EP (3x3)
MSCSM170DUM15T3AG
Microchip Technology

SIC 2N-CH 1700V 181A SP3F

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 181A (Tc)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V
  • Vgs(th) (Max) @ Id: 3.2V @ 7.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V
  • Power - Max: 862W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP3F
封装: -
库存15
-
1700V (1.7kV)
181A (Tc)
15mOhm @ 90A, 20V
3.2V @ 7.5mA
534nC @ 20V
9900pF @ 1000V
862W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP3F
DMN601DWKQ-7
Diodes Incorporated

MOSFET 2N-CH 60V 0.305A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 305mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 0.304nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 200mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
封装: -
库存194,640
-
60V
305mA (Ta)
2Ohm @ 500mA, 10V
2.5V @ 1mA
0.304nC @ 4.5V
50pF @ 25V
200mW
-65°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
CWDM305PD-TR13-PBFREE
Central Semiconductor Corp

MOSFET 2P-CH 30V 5.3A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A
  • Rds On (Max) @ Id, Vgs: 72mOhm @ 2.7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: -
Request a Quote
-
30V
5.3A
72mOhm @ 2.7A, 10V
3V @ 250µA
7nC @ 5V
590pF @ 10V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
PJX138K_R1_00001
Panjit International Inc.

MOSFET 2N-CH 50V 0.35A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 223mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
封装: -
库存75,456
-
50V
350mA (Ta)
1.6Ohm @ 500mA, 10V
1.5V @ 250µA
1nC @ 4.5V
50pF @ 25V
223mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
PJT7802_R1_00001
Panjit International Inc.

MOSFET 2N-CH 20V 0.5A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
  • Power - Max: 350mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
封装: -
库存8,100
-
20V
500mA (Ta)
400mOhm @ 500mA, 4.5V
1V @ 250µA
0.9nC @ 4.5V
39pF @ 10V
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
BSM600D12P3G001
Rohm Semiconductor

SIC 2N-CH 1200V 600A MODULE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 5.6V @ 182mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 31000pF @ 10V
  • Power - Max: 2450W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
库存12
-
1200V (1.2kV)
600A (Tc)
-
5.6V @ 182mA
-
31000pF @ 10V
2450W (Tc)
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
PJL9850_R2_00001
Panjit International Inc.

MOSFET 2N-CH 40V 5.4A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 25V
  • Power - Max: 1.7W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: -
库存11,454
-
40V
5.4A (Ta)
32mOhm @ 5A, 10V
2.5V @ 250µA
4.4nC @ 4.5V
425pF @ 25V
1.7W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SSM5N16FU-LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.1A USV

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
  • Power - Max: 200mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: USV
封装: -
库存9,000
-
20V
100mA (Ta)
3Ohm @ 10mA, 4V
1.1V @ 100µA
-
9.3pF @ 3V
200mW (Ta)
150°C
Surface Mount
5-TSSOP, SC-70-5, SOT-353
USV
TSM8568CV-RGG
Taiwan Semiconductor Corporation

-30V, -4.5A, COMPLEMENTARY P-CHA

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存30,000
-
-
-
-
-
-
-
-
-
-
-
-
SH8MA2GZETB
Rohm Semiconductor

MOSFET N/P-CH 30V 4.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 4.5A, 10V, 82mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V, 6.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 15V, 305pF @ 15V
  • Power - Max: 1.4W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: -
库存9,813
-
30V
4.5A (Ta)
80mOhm @ 4.5A, 10V, 82mOhm @ 4.5A, 10V
2.5V @ 1mA
3nC @ 4.5V, 6.7nC @ 4.5V
125pF @ 15V, 305pF @ 15V
1.4W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMG1023UVQ-7
Diodes Incorporated

MOSFET 2P-CH 20V 1.03A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.03A (Ta)
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.622nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 59pF @ 16V
  • Power - Max: 530mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
封装: -
库存8,700
-
20V
1.03A (Ta)
750mOhm @ 430mA, 4.5V
1V @ 250µA
0.622nC @ 4.5V
59pF @ 16V
530mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
2N7002DWAQ-7
Diodes Incorporated

MOSFET 2N-CH 60V 0.18A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
  • Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
封装: -
Request a Quote
-
60V
180mA (Ta)
6Ohm @ 115mA, 10V
2.5V @ 250µA
0.87nC @ 10V
22pF @ 25V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363