页 63 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BSD235N L6327	Infineon Technologies	MOSFET 2N-CH 20V 0.95A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 950mA Rds On (Max) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1.6µA Gate Charge (Qg) (Max) @ Vgs: 0.32nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 63pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	封装: 6-VSSOP, SC-88, SOT-363	库存6,672	Logic Level Gate	20V	950mA	350 mOhm @ 950mA, 4.5V	1.2V @ 1.6µA	0.32nC @ 4.5V	63pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6
MCH6663-TL-H	ON Semiconductor	MOSFET N/P-CH 30V 1.8/1.5A MCPH6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.8A, 1.5A Rds On (Max) @ Id, Vgs: 188 mOhm @ 900mA, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 88pF @ 10V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-MCPH	封装: 6-SMD, Flat Leads	库存3,264	Logic Level Gate	30V	1.8A, 1.5A	188 mOhm @ 900mA, 10V	-	2nC @ 10V	88pF @ 10V	800mW	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, Flat Leads	6-MCPH
SI1563DH-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 20V 1.13A SC70-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.13A, 880mA Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 570mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	封装: 6-TSSOP, SC-88, SOT-363	库存611,352	Logic Level Gate	20V	1.13A, 880mA	280 mOhm @ 1.13A, 4.5V	1V @ 100µA	2nC @ 4.5V	-	570mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
STS4DNF30L	STMicroelectronics	MOSFET 2N-CH 30V 4A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存406,656	Logic Level Gate	30V	4A	50 mOhm @ 2A, 10V	1V @ 250µA	9nC @ 10V	330pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7380PBF	Infineon Technologies	MOSFET 2N-CH 80V 3.6A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 3.6A Rds On (Max) @ Id, Vgs: 73 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存5,888	Logic Level Gate	80V	3.6A	73 mOhm @ 2.2A, 10V	4V @ 250µA	23nC @ 10V	660pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTML502UM90R020T3AG	Microsemi Corporation	MOSFET 2N-CH 500V 52A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 52A Rds On (Max) @ Id, Vgs: 108 mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V Power - Max: 568W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	封装: SP3	库存6,560	Standard	500V	52A	108 mOhm @ 26A, 10V	4V @ 2.5mA	-	7600pF @ 25V	568W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
HCT802TXV	TT Electronics/Optek Technology	MOSFET N/P-CH 90V 2A/1.1A SMD FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 2A, 1.1A Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: 6-SMD	封装: 6-SMD, No Lead	库存7,216	Standard	90V	2A, 1.1A	5 Ohm @ 1A, 10V	2.5V @ 1mA	-	70pF @ 25V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	6-SMD
HTMN5130SSD-13	Diodes Incorporated	MOSFET 2N-CH 55V 2.6A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 2.6A Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 218.7pF @ 25V Power - Max: 1.7W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存3,312	Standard	55V	2.6A	130 mOhm @ 3A, 10V	3V @ 250µA	8.9nC @ 10V	218.7pF @ 25V	1.7W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SIA533EDJ-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 12V 4.5A SC70-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 6V Power - Max: 7.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	封装: PowerPAK? SC-70-6 Dual	库存2,656	Logic Level Gate	12V	4.5A	34 mOhm @ 4.6A, 4.5V	1V @ 250µA	15nC @ 10V	420pF @ 6V	7.8W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
IRF7507TRPBF	Infineon Technologies	MOSFET N/P-CH 20V 1.7A MICRO8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.4A, 1.7A Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.7A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: Micro8?	封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	库存27,876	Logic Level Gate	20V	2.4A, 1.7A	140 mOhm @ 1.7A, 4.5V	700mV @ 250µA	8nC @ 4.5V	260pF @ 15V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Micro8?
SMA5118	Sanken	MOSFET 6N-CH 500V 5A 12-SIP FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 10V Power - Max: 4W Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 12-SIP, Exposed Tab Supplier Device Package: 12-SIP	封装: 12-SIP, Exposed Tab	库存6,192	Standard	500V	5A	1.4 Ohm @ 2.5A, 10V	4V @ 1mA	-	770pF @ 10V	4W	150°C (TJ)	Through Hole	12-SIP, Exposed Tab	12-SIP
DMP2060UFDB-7	Diodes Incorporated	MOSFET 2P-CH 20V 3.2A 6UDFN FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	封装: 6-UDFN Exposed Pad	库存3,424	Standard	20V	3.2A	90 mOhm @ 2.9A, 4.5V	1.4V @ 250µA	18nC @ 8V	881pF @ 10V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
ALD114913SAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8SOIC FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500 Ohm @ 2.7V Vgs(th) (Max) @ Id: 1.26V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存6,504	Depletion Mode	10.6V	12mA, 3mA	500 Ohm @ 2.7V	1.26V @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DMG4932LSD-13	Diodes Incorporated	MOSFET 2N-CH 30V 9.5A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.5A Rds On (Max) @ Id, Vgs: 15 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1932pF @ 15V Power - Max: 1.19W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存60,000	Logic Level Gate	30V	9.5A	15 mOhm @ 9A, 10V	2.4V @ 250µA	42nC @ 10V	1932pF @ 15V	1.19W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMC3032LSD-13	Diodes Incorporated	MOSFET N/P-CH 30V 8.1A/7A 8SOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.1A, 7A Rds On (Max) @ Id, Vgs: 32 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 404.5pF @ 15V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存245,448	Logic Level Gate	30V	8.1A, 7A	32 mOhm @ 7A, 10V	2.1V @ 250µA	9.2nC @ 10V	404.5pF @ 15V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMS3600S	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 15A/30A 8-PQFN FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 15A, 30A Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 13V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	封装: 8-PowerTDFN	库存24,498	Logic Level Gate	25V	15A, 30A	5.6 mOhm @ 15A, 10V	2.7V @ 250µA	27nC @ 10V	1680pF @ 13V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
MSCSM170TAM15CTPAG	Microchip Technology	SIC 6N-CH 1700V 179A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 179A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V Vgs(th) (Max) @ Id: 3.2V @ 7.5mA Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V Power - Max: 843W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	库存30	-	1700V (1.7kV)	179A (Tc)	15mOhm @ 90A, 20V	3.2V @ 7.5mA	534nC @ 20V	9900pF @ 1000V	843W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
NVMFD5C446NLWFT1G	onsemi	MOSFET 2N-CH 40V 25A/145A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc) Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V Power - Max: 3.5W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	封装: -	库存3,180	-	40V	25A (Ta), 145A (Tc)	2.65mOhm @ 20A, 10V	2.2V @ 90µA	25nC @ 4.5V	3170pF @ 25V	3.5W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
MCQD08P04-TP	Micro Commercial Co	MOSFET FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 50mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23.98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1045pF @ 30V Power - Max: 2.4W Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	Request a Quote	-	40V	8A	50mOhm @ 4.3A, 10V	2.5V @ 250µA	23.98nC @ 10V	1045pF @ 30V	2.4W	-55°C ~ 150°C	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
NVMFD5C672NLT1G	onsemi	MOSFET 2N-CH 60V 12A/49A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 11.9mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 793pF @ 25V Power - Max: 3.1W (Ta), 45W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	封装: -	Request a Quote	-	60V	12A (Ta), 49A (Tc)	11.9mOhm @ 10A, 10V	2.2V @ 30µA	5.7nC @ 4.5V	793pF @ 25V	3.1W (Ta), 45W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
UPA1981TE-T1-A	Renesas	MOSFET N/P-CH 8V 2.8A SC95 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 5V, 105mOhm @ 1.9A, 2.5V Vgs(th) (Max) @ Id: 200mV @ 2.8A, 200mV @ 1.9A Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SC-95 Supplier Device Package: SC-95	封装: -	Request a Quote	-	8V	2.8A (Ta)	70mOhm @ 2.8A, 5V, 105mOhm @ 1.9A, 2.5V	200mV @ 2.8A, 200mV @ 1.9A	-	-	1W (Ta)	150°C	Surface Mount	SC-95	SC-95
AOCA32301	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 9A 4ALPHADFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.9W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: 4-AlphaDFN (1.9x1.3)	封装: -	Request a Quote	-	30V	9A (Ta)	18mOhm @ 4A, 10V	1.9V @ 250µA	24.5nC @ 10V	-	1.9W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, No Lead	4-AlphaDFN (1.9x1.3)
IRF7501TR	Infineon Technologies	MOSFET 2N-CH 20V 2.4A MICRO8 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.4A Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V Power - Max: 1.25W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: Micro8™	封装: -	Request a Quote	Logic Level Gate	20V	2.4A	135mOhm @ 1.7A, 4.5V	700mV @ 250µA	8nC @ 4.5V	260pF @ 15V	1.25W	-	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Micro8™
DMN2016UFX-7	Diodes Incorporated	MOSFET 2N-CH 24V 9.9A 4VDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V Power - Max: 1.07W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-VFDFN Exposed Pad Supplier Device Package: V-DFN2050-4	封装: -	Request a Quote	-	24V	9.9A (Ta)	15mOhm @ 6.5A, 4.5V	1.5V @ 250µA	14nC @ 4.5V	950pF @ 10V	1.07W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	4-VFDFN Exposed Pad	V-DFN2050-4
M1F45M12W2-1LA	STMicroelectronics	AUTOMOTIVE-GRADE ACEPACK DMT-32 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 20A, 18V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 2086pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: 32-PowerDIP Module (1.264", 32.10mm) Supplier Device Package: ACEPACK DMT-32	封装: -	库存255	-	1200V (1.2kV)	30A (Tc)	64mOhm @ 20A, 18V	5V @ 1mA	100nC @ 18V	2086pF @ 800V	-	-40°C ~ 175°C (TJ)	Through Hole	32-PowerDIP Module (1.264", 32.10mm)	ACEPACK DMT-32
SSF2215	Good-Ark Semiconductor	MOSFET 2P-CH 20V 3A SOT23-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 15V Power - Max: 1.25W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6L	封装: -	库存17,775	-	20V	3A (Ta)	85mOhm @ 3A, 4.5V	1V @ 250µA	8nC @ 4.5V	510pF @ 15V	1.25W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6L
SP8K2HZGTB	Rohm Semiconductor	MOSFET 2N-CH 30V 6A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Power - Max: 1.4W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	库存7,170	-	30V	6A (Ta)	30mOhm @ 6A, 10V	2.5V @ 1mA	10.1nC @ 5V	520pF @ 10V	1.4W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMT4014LDV-13	Diodes Incorporated	MOSFET 2N-CH 40V 8.5A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 26.5A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V Power - Max: 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type UXC)	封装: -	Request a Quote	-	40V	8.5A (Ta), 26.5A (Tc)	19mOhm @ 20A, 10V	3V @ 250µA	11.2nC @ 10V	750pF @ 20V	1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type UXC)
EM6J1T2CR	Rohm Semiconductor	MOSFET 2P-CH 20V EMT6 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SI1922EDH-T1-BE3	Vishay Siliconix	MOSFET 2N-CH 20V 1.3A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), 1.3A (Tc) Rds On (Max) @ Id, Vgs: 198mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 740mW (Ta), 1.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	封装: -	Request a Quote	-	20V	1.3A (Ta), 1.3A (Tc)	198mOhm @ 1A, 4.5V	1V @ 250µA	2.5nC @ 8V	-	740mW (Ta), 1.25W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6

BSD235N L6327

Infineon Technologies

MOSFET 2N-CH 20V 0.95A SOT363

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 950mA
Rds On (Max) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 1.6µA
Gate Charge (Qg) (Max) @ Vgs: 0.32nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 63pF @ 10V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

封装: 6-VSSOP, SC-88, SOT-363

库存6,672

Logic Level Gate

20V

950mA

350 mOhm @ 950mA, 4.5V

1.2V @ 1.6µA

0.32nC @ 4.5V

63pF @ 10V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

6-VSSOP, SC-88, SOT-363

PG-SOT363-6

MCH6663-TL-H

ON Semiconductor

MOSFET N/P-CH 30V 1.8/1.5A MCPH6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.8A, 1.5A
Rds On (Max) @ Id, Vgs: 188 mOhm @ 900mA, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 88pF @ 10V
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-MCPH

封装: 6-SMD, Flat Leads

库存3,264

Logic Level Gate

30V

1.8A, 1.5A

188 mOhm @ 900mA, 10V

-

2nC @ 10V

88pF @ 10V

800mW

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, Flat Leads

6-MCPH

SI1563DH-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V 1.13A SC70-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.13A, 880mA
Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 570mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

封装: 6-TSSOP, SC-88, SOT-363

库存611,352

Logic Level Gate

20V

1.13A, 880mA

280 mOhm @ 1.13A, 4.5V

1V @ 100µA

2nC @ 4.5V

-

570mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

STS4DNF30L

STMicroelectronics

MOSFET 2N-CH 30V 4A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存406,656

Logic Level Gate

30V

4A

50 mOhm @ 2A, 10V

1V @ 250µA

9nC @ 10V

330pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF7380PBF

Infineon Technologies

MOSFET 2N-CH 80V 3.6A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Rds On (Max) @ Id, Vgs: 73 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存5,888

Logic Level Gate

80V

3.6A

73 mOhm @ 2.2A, 10V

4V @ 250µA

23nC @ 10V

660pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

APTML502UM90R020T3AG

Microsemi Corporation

MOSFET 2N-CH 500V 52A SP3

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 52A
Rds On (Max) @ Id, Vgs: 108 mOhm @ 26A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
Power - Max: 568W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

封装: SP3

库存6,560

Standard

500V

52A

108 mOhm @ 26A, 10V

4V @ 2.5mA

-

7600pF @ 25V

568W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

HCT802TXV

TT Electronics/Optek Technology

MOSFET N/P-CH 90V 2A/1.1A SMD

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 90V
Current - Continuous Drain (Id) @ 25°C: 2A, 1.1A
Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: 6-SMD

封装: 6-SMD, No Lead

库存7,216

Standard

90V

2A, 1.1A

5 Ohm @ 1A, 10V

2.5V @ 1mA

-

70pF @ 25V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, No Lead

6-SMD

HTMN5130SSD-13

Diodes Incorporated

MOSFET 2N-CH 55V 2.6A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 218.7pF @ 25V
Power - Max: 1.7W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存3,312

Standard

55V

2.6A

130 mOhm @ 3A, 10V

3V @ 250µA

8.9nC @ 10V

218.7pF @ 25V

1.7W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SIA533EDJ-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 12V 4.5A SC70-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 6V
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

封装: PowerPAK? SC-70-6 Dual

库存2,656

Logic Level Gate

12V

4.5A

34 mOhm @ 4.6A, 4.5V

1V @ 250µA

15nC @ 10V

420pF @ 6V

7.8W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Dual

IRF7507TRPBF

Infineon Technologies

MOSFET N/P-CH 20V 1.7A MICRO8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.4A, 1.7A
Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.7A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: Micro8?

封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

库存27,876

Logic Level Gate

20V

2.4A, 1.7A

140 mOhm @ 1.7A, 4.5V

700mV @ 250µA

8nC @ 4.5V

260pF @ 15V

1.25W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Micro8?

SMA5118

Sanken

MOSFET 6N-CH 500V 5A 12-SIP

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 10V
Power - Max: 4W
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 12-SIP, Exposed Tab
Supplier Device Package: 12-SIP

封装: 12-SIP, Exposed Tab

库存6,192

Standard

500V

5A

1.4 Ohm @ 2.5A, 10V

4V @ 1mA

-

770pF @ 10V

4W

150°C (TJ)

Through Hole

12-SIP, Exposed Tab

12-SIP

DMP2060UFDB-7

Diodes Incorporated

MOSFET 2P-CH 20V 3.2A 6UDFN

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

封装: 6-UDFN Exposed Pad

库存3,424

Standard

20V

3.2A

90 mOhm @ 2.9A, 4.5V

1.4V @ 250µA

18nC @ 8V

881pF @ 10V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

ALD114913SAL

Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8SOIC

FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Depletion Mode
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Rds On (Max) @ Id, Vgs: 500 Ohm @ 2.7V
Vgs(th) (Max) @ Id: 1.26V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存6,504

Depletion Mode

10.6V

12mA, 3mA

500 Ohm @ 2.7V

1.26V @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

DMG4932LSD-13

Diodes Incorporated

MOSFET 2N-CH 30V 9.5A 8SO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.5A
Rds On (Max) @ Id, Vgs: 15 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1932pF @ 15V
Power - Max: 1.19W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存60,000

Logic Level Gate

30V

9.5A

15 mOhm @ 9A, 10V

2.4V @ 250µA

42nC @ 10V

1932pF @ 15V

1.19W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMC3032LSD-13

Diodes Incorporated

MOSFET N/P-CH 30V 8.1A/7A 8SOP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.1A, 7A
Rds On (Max) @ Id, Vgs: 32 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 404.5pF @ 15V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存245,448

Logic Level Gate

30V

8.1A, 7A

32 mOhm @ 7A, 10V

2.1V @ 250µA

9.2nC @ 10V

404.5pF @ 15V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDMS3600S

Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 15A/30A 8-PQFN

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 15A, 30A
Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 13V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56

封装: 8-PowerTDFN

库存24,498

Logic Level Gate

25V

15A, 30A

5.6 mOhm @ 15A, 10V

2.7V @ 250µA

27nC @ 10V

1680pF @ 13V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

Power56

MSCSM170TAM15CTPAG

Microchip Technology

SIC 6N-CH 1700V 179A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 179A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V
Vgs(th) (Max) @ Id: 3.2V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V
Power - Max: 843W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

库存30

-

1700V (1.7kV)

179A (Tc)

15mOhm @ 90A, 20V

3.2V @ 7.5mA

534nC @ 20V

9900pF @ 1000V

843W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

NVMFD5C446NLWFT1G

onsemi

MOSFET 2N-CH 40V 25A/145A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V
Power - Max: 3.5W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

封装: -

库存3,180

-

40V

25A (Ta), 145A (Tc)

2.65mOhm @ 20A, 10V

2.2V @ 90µA

25nC @ 4.5V

3170pF @ 25V

3.5W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)

MCQD08P04-TP

Micro Commercial Co

MOSFET

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23.98nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1045pF @ 30V
Power - Max: 2.4W
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

Request a Quote

-

40V

8A

50mOhm @ 4.3A, 10V

2.5V @ 250µA

23.98nC @ 10V

1045pF @ 30V

2.4W

-55°C ~ 150°C

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

NVMFD5C672NLT1G

onsemi

MOSFET 2N-CH 60V 12A/49A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 793pF @ 25V
Power - Max: 3.1W (Ta), 45W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

封装: -

Request a Quote

-

60V

12A (Ta), 49A (Tc)

11.9mOhm @ 10A, 10V

2.2V @ 30µA

5.7nC @ 4.5V

793pF @ 25V

3.1W (Ta), 45W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)

UPA1981TE-T1-A

Renesas

MOSFET N/P-CH 8V 2.8A SC95

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 5V, 105mOhm @ 1.9A, 2.5V
Vgs(th) (Max) @ Id: 200mV @ 2.8A, 200mV @ 1.9A
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SC-95
Supplier Device Package: SC-95

封装: -

Request a Quote

-

8V

2.8A (Ta)

70mOhm @ 2.8A, 5V, 105mOhm @ 1.9A, 2.5V

200mV @ 2.8A, 200mV @ 1.9A

-

1W (Ta)

150°C

Surface Mount

SC-95

AOCA32301

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 9A 4ALPHADFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.9W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: 4-AlphaDFN (1.9x1.3)

封装: -

Request a Quote

-

30V

9A (Ta)

18mOhm @ 4A, 10V

1.9V @ 250µA

24.5nC @ 10V

-

1.9W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

4-SMD, No Lead

4-AlphaDFN (1.9x1.3)

IRF7501TR

Infineon Technologies

MOSFET 2N-CH 20V 2.4A MICRO8

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
Power - Max: 1.25W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: Micro8™

封装: -

Request a Quote

Logic Level Gate

20V

2.4A

135mOhm @ 1.7A, 4.5V

700mV @ 250µA

8nC @ 4.5V

260pF @ 15V

1.25W

-

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Micro8™

DMN2016UFX-7

Diodes Incorporated

MOSFET 2N-CH 24V 9.9A 4VDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
Power - Max: 1.07W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-VFDFN Exposed Pad
Supplier Device Package: V-DFN2050-4

封装: -

Request a Quote

-

24V

9.9A (Ta)

15mOhm @ 6.5A, 4.5V

1.5V @ 250µA

14nC @ 4.5V

950pF @ 10V

1.07W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

4-VFDFN Exposed Pad

V-DFN2050-4

M1F45M12W2-1LA

STMicroelectronics

AUTOMOTIVE-GRADE ACEPACK DMT-32

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20A, 18V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 2086pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: 32-PowerDIP Module (1.264", 32.10mm)
Supplier Device Package: ACEPACK DMT-32

封装: -

库存255

-

1200V (1.2kV)

30A (Tc)

64mOhm @ 20A, 18V

5V @ 1mA

100nC @ 18V

2086pF @ 800V

-

-40°C ~ 175°C (TJ)

Through Hole

32-PowerDIP Module (1.264", 32.10mm)

ACEPACK DMT-32

SSF2215

Good-Ark Semiconductor

MOSFET 2P-CH 20V 3A SOT23-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 15V
Power - Max: 1.25W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6L

封装: -

库存17,775

-

20V

3A (Ta)

85mOhm @ 3A, 4.5V

1V @ 250µA

8nC @ 4.5V

510pF @ 15V

1.25W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SOT-23-6L

SP8K2HZGTB

Rohm Semiconductor

MOSFET 2N-CH 30V 6A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Power - Max: 1.4W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

库存7,170

-

30V

6A (Ta)

30mOhm @ 6A, 10V

2.5V @ 1mA

10.1nC @ 5V

520pF @ 10V

1.4W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMT4014LDV-13

Diodes Incorporated

MOSFET 2N-CH 40V 8.5A PWRDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 26.5A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
Power - Max: 1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (Type UXC)

封装: -

Request a Quote

-

40V

8.5A (Ta), 26.5A (Tc)

19mOhm @ 20A, 10V

3V @ 250µA

11.2nC @ 10V

750pF @ 20V

1W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8 (Type UXC)

EM6J1T2CR

Rohm Semiconductor

MOSFET 2P-CH 20V EMT6

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

SI1922EDH-T1-BE3

Vishay Siliconix

MOSFET 2N-CH 20V 1.3A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), 1.3A (Tc)
Rds On (Max) @ Id, Vgs: 198mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 740mW (Ta), 1.25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

封装: -

Request a Quote

-

20V

1.3A (Ta), 1.3A (Tc)

198mOhm @ 1A, 4.5V

1V @ 250µA

2.5nC @ 8V

-

740mW (Ta), 1.25W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6