晶体管 - UGBT，MOSFET - 单

IRG7PH50K10D-EPBF

Infineon Technologies

IGBT 1200V 90A 400W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 90A
• Current - Collector Pulsed (Icm): 160A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A
• Power - Max: 400W
• Switching Energy: 2.3mJ (on), 1.6mJ (off)
• Input Type: Standard
• Gate Charge: 300nC
• Td (on/off) @ 25°C: 90ns/340ns
• Test Condition: 600V, 35A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 130ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

封装: TO-247-3

IRG4BH20K-L

Infineon Technologies

IGBT 1200V 11A 60W TO262

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 11A
• Current - Collector Pulsed (Icm): 22A
• Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
• Power - Max: 60W
• Switching Energy: 450µJ (on), 440µJ (off)
• Input Type: Standard
• Gate Charge: 28nC
• Td (on/off) @ 25°C: 23ns/93ns
• Test Condition: 960V, 5A, 50 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
• Supplier Device Package: TO-262

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

IRG4PSC71K

Infineon Technologies

IGBT 600V 85A 350W SUPER247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 85A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
• Power - Max: 350W
• Switching Energy: 790µJ (on), 1.98mJ (off)
• Input Type: Standard
• Gate Charge: 340nC
• Td (on/off) @ 25°C: 34ns/54ns
• Test Condition: 480V, 60A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-274AA
• Supplier Device Package: SUPER-247 (TO-274AA)

封装: TO-274AA

IXSH24N60A

IXYS

IGBT 600V 48A 150W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 48A
• Current - Collector Pulsed (Icm): 96A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
• Power - Max: 150W
• Switching Energy: 2mJ (off)
• Input Type: Standard
• Gate Charge: 75nC
• Td (on/off) @ 25°C: 100ns/450ns
• Test Condition: 480V, 24A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXSH)

封装: TO-247-3

IXGH12N60BD1

IXYS

IGBT 600V 24A 100W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 24A
• Current - Collector Pulsed (Icm): 48A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
• Power - Max: 100W
• Switching Energy: 500µJ (off)
• Input Type: Standard
• Gate Charge: 32nC
• Td (on/off) @ 25°C: 20ns/150ns
• Test Condition: 480V, 12A, 18 Ohm, 15V
• Reverse Recovery Time (trr): 35ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

封装: TO-247-3

IXGA12N60B

IXYS

IGBT 600V 24A 100W TO263AA

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 24A
• Current - Collector Pulsed (Icm): 48A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
• Power - Max: 100W
• Switching Energy: 500µJ (off)
• Input Type: Standard
• Gate Charge: 32nC
• Td (on/off) @ 25°C: 20ns/150ns
• Test Condition: 480V, 12A, 18 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (IXGA)

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

HGT1S3N60A4DS9A

Fairchild/ON Semiconductor

IGBT 600V 17A 70W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 17A
• Current - Collector Pulsed (Icm): 40A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 3A
• Power - Max: 70W
• Switching Energy: 37µJ (on), 25µJ (off)
• Input Type: Standard
• Gate Charge: 21nC
• Td (on/off) @ 25°C: 6ns/73ns
• Test Condition: 390V, 3A, 50 Ohm, 15V
• Reverse Recovery Time (trr): 29ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FGB20N6S2

Fairchild/ON Semiconductor

IGBT 600V 28A 125W TO263AB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 28A
• Current - Collector Pulsed (Icm): 40A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
• Power - Max: 125W
• Switching Energy: 25µJ (on), 58µJ (off)
• Input Type: Standard
• Gate Charge: 30nC
• Td (on/off) @ 25°C: 7.7ns/87ns
• Test Condition: 390V, 7A, 25 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IGW03N120H2FKSA1

Infineon Technologies

IGBT 1200V 9.6A 62.5W TO247-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 9.6A
• Current - Collector Pulsed (Icm): 9.9A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
• Power - Max: 62.5W
• Switching Energy: 290µJ
• Input Type: Standard
• Gate Charge: 22nC
• Td (on/off) @ 25°C: 9.2ns/281ns
• Test Condition: 800V, 3A, 82 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

封装: TO-247-3

IRGC4263B

Infineon Technologies

IGBT CHIP WAFER

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 48A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): 60ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封装: Die

RJH65T47DPQ-A0#T0

Renesas Electronics America

IGBT TRENCH 650V 90A TO247A

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 90A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A
• Power - Max: 375W
• Switching Energy: 520µJ (on), 560µJ (off)
• Input Type: Standard
• Gate Charge: 127nC
• Td (on/off) @ 25°C: 45ns/190ns
• Test Condition: 400V, 45A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 100ns
• Operating Temperature: 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247A

封装: TO-247-3

SGF80N60UFTU

Fairchild/ON Semiconductor

IGBT 600V 80A 110W TO3PF

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 220A
• Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
• Power - Max: 110W
• Switching Energy: 570µJ (on), 590µJ (off)
• Input Type: Standard
• Gate Charge: 175nC
• Td (on/off) @ 25°C: 23ns/90ns
• Test Condition: 300V, 40A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: SC-94
• Supplier Device Package: TO-3PF

封装: SC-94

IXGA12N120A3

IXYS

IGBT 1200V 22A 100W TO263

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 22A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
• Power - Max: 100W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 20.4nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (IXGA)

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

STGP3HF60HD

STMicroelectronics

IGBT BIPO 600V 3A TO220

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 7.5A
• Current - Collector Pulsed (Icm): 18A
• Vce(on) (Max) @ Vge, Ic: 2.95V @ 15V, 1.5A
• Power - Max: 38W
• Switching Energy: 19µJ (on), 12µJ (off)
• Input Type: Standard
• Gate Charge: 12nC
• Td (on/off) @ 25°C: 11ns/60ns
• Test Condition: 400V, 1.5A, 100 Ohm, 15V
• Reverse Recovery Time (trr): 85ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220

封装: TO-220-3

STGWA19NC60HD

STMicroelectronics

IGBT 600V 52A 208W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 52A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
• Power - Max: 208W
• Switching Energy: 85µJ (on), 189µJ (off)
• Input Type: Standard
• Gate Charge: 53nC
• Td (on/off) @ 25°C: 25ns/97ns
• Test Condition: 390V, 12A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 31ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

封装: TO-247-3

IXYK100N120C3

IXYS

IGBT 1200V 188A 1150W TO264

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 188A
• Current - Collector Pulsed (Icm): 490A
• Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
• Power - Max: 1150W
• Switching Energy: 6.5mJ (on), 2.9mJ (off)
• Input Type: Standard
• Gate Charge: 270nC
• Td (on/off) @ 25°C: 32ns/123ns
• Test Condition: 600V, 100A, 1 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: TO-264 (IXYK)

封装: TO-264-3, TO-264AA

STGB18N40LZT4

STMicroelectronics

IGBT 420V 30A 150W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 420V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 40A
• Vce(on) (Max) @ Vge, Ic: 1.7V @ 4.5V, 10A
• Power - Max: 150W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: 29nC
• Td (on/off) @ 25°C: 650ns/13.5µs
• Test Condition: 300V, 10A, 5V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

STGB40H65FB

STMicroelectronics

IGBT BIPO 650V 40A D2PAK

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 160A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
• Power - Max: 283W
• Switching Energy: 498µJ (on), 363µJ (off)
• Input Type: Standard
• Gate Charge: 210nC
• Td (on/off) @ 25°C: 40ns/142ns
• Test Condition: 400V, 40A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRGS15B60KDTRRP

Infineon Technologies

IGBT 600V 31A 208W D2PAK

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 31A
• Current - Collector Pulsed (Icm): 62A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
• Power - Max: 208W
• Switching Energy: 220µJ (on), 340µJ (off)
• Input Type: Standard
• Gate Charge: 56nC
• Td (on/off) @ 25°C: 34ns/184ns
• Test Condition: 400V, 15A, 22 Ohm, 15V
• Reverse Recovery Time (trr): 92ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RGS50TSX2HRC11

Rohm Semiconductor

IGBT TRENCH FLD 1200V 50A TO247N

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 50 A
• Current - Collector Pulsed (Icm): 75 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
• Power - Max: 395 W
• Switching Energy: 1.4mJ (on), 1.65mJ (off)
• Input Type: Standard
• Gate Charge: 67 nC
• Td (on/off) @ 25°C: 37ns/140ns
• Test Condition: 600V, 25A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247N

封装: -

SIGC12T60SNCX7SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 10 A
• Current - Collector Pulsed (Icm): 30 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 29ns/266ns
• Test Condition: 400V, 10A, 25Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封装: -

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FGD3050G2V

onsemi

IGBT 500V 27A DPAK-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 500 V
• Current - Collector (Ic) (Max): 32 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.2V @ 4V, 6A
• Power - Max: 150 W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: 22 nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: DPAK

封装: -

HGTP15N40C1

Harris Corporation

15A, 400V, N-CHANNEL IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 400 V
• Current - Collector (Ic) (Max): 15 A
• Current - Collector Pulsed (Icm): 35 A
• Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 35A
• Power - Max: 75 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 33 nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220

封装: -

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RGCL80TS60DGC13

Rohm Semiconductor

IGBT TRENCH FS 600V 65A TO247G

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 65 A
• Current - Collector Pulsed (Icm): 160 A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
• Power - Max: 148 W
• Switching Energy: 1.11mJ (on), 1.68mJ (off)
• Input Type: Standard
• Gate Charge: 98 nC
• Td (on/off) @ 25°C: 53ns/227ns
• Test Condition: 400V, 40A, 10Ohm, 15V
• Reverse Recovery Time (trr): 58 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247G

封装: -

IXGT25N250HV

IXYS

IGBT 2500V 60A TO268HV

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 2500 V
• Current - Collector (Ic) (Max): 60 A
• Current - Collector Pulsed (Icm): 200 A
• Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 25A
• Power - Max: 250 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 75 nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268HV (IXGT)

封装: -

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HGTP10N40C1D

Harris Corporation

17.5A, 400V, N-CHANNEL IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 400 V
• Current - Collector (Ic) (Max): 17.5 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 17.5A
• Power - Max: 75 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 19 nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220

封装: -

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CT30VM-8-G01

Renesas Electronics Corporation

N CHANNEL IGBT, 400V, FOR STROBE

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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SIGC25T60SNCX1SA2

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 30 A
• Current - Collector Pulsed (Icm): 90 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 44ns/324ns
• Test Condition: 400V, 30A, 11Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封装: -

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