晶体管 - UGBT，MOSFET - 单

NGTB30N60FWG

ON Semiconductor

IGBT 600V 60A 167W TO247

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
• Power - Max: 167W
• Switching Energy: 650µJ (on), 650µJ (off)
• Input Type: Standard
• Gate Charge: 170nC
• Td (on/off) @ 25°C: 81ns/190ns
• Test Condition: 400V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 72ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

封装: TO-247-3

RJH60D0DPK-00#T0

Renesas Electronics America

IGBT 600V 45A 140W TO3P

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 45A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A
• Power - Max: 140W
• Switching Energy: 230µJ (on), 290µJ (off)
• Input Type: Standard
• Gate Charge: 46nC
• Td (on/off) @ 25°C: 40ns/80ns
• Test Condition: 300V, 22A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 100ns
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P

封装: TO-3P-3, SC-65-3

IXSH45N120B

IXYS

IGBT 1200V 75A 300W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 180A
• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 45A
• Power - Max: 300W
• Switching Energy: 13mJ (off)
• Input Type: Standard
• Gate Charge: 120nC
• Td (on/off) @ 25°C: 36ns/360ns
• Test Condition: 960V, 45A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXSH)

封装: TO-247-3

IXGH35N120B

IXYS

IGBT 1200V 70A 300W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 70A
• Current - Collector Pulsed (Icm): 140A
• Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 35A
• Power - Max: 300W
• Switching Energy: 3.8mJ (off)
• Input Type: Standard
• Gate Charge: 170nC
• Td (on/off) @ 25°C: 50ns/180ns
• Test Condition: 960V, 35A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

封装: TO-247-3

AUIRGP4062D1

Infineon Technologies

IGBT 600V 55A 217W TO247AC

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 55A
• Current - Collector Pulsed (Icm): 72A
• Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 24A
• Power - Max: 217W
• Switching Energy: 532µJ (on), 311µJ (off)
• Input Type: Standard
• Gate Charge: 77nC
• Td (on/off) @ 25°C: 19ns/90ns
• Test Condition: 400V, 24A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 102ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

封装: TO-247-3

IXBH14N250A

IXYS

IGBT 2500V TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 2500V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXBH)

封装: TO-247-3

IXGT4N250C

IXYS

IGBT 2500V 13A 150W TO268

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 2500V
• Current - Collector (Ic) (Max): 13A
• Current - Collector Pulsed (Icm): 46A
• Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 4A
• Power - Max: 150W
• Switching Energy: 360µJ (off)
• Input Type: Standard
• Gate Charge: 57nC
• Td (on/off) @ 25°C: -/350ns
• Test Condition: 1250V, 4A, 20 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXGR6N170A

IXYS

IGBT 1700V 5.5A 50W ISOPLUS247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1700V
• Current - Collector (Ic) (Max): 5.5A
• Current - Collector Pulsed (Icm): 18A
• Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A
• Power - Max: 50W
• Switching Energy: 590µJ (on), 180µJ (off)
• Input Type: Standard
• Gate Charge: 18.5nC
• Td (on/off) @ 25°C: 46ns/220ns
• Test Condition: 850V, 6A, 33 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: ISOPLUS247?

封装: TO-247-3

RJH60F6DPQ-A0#T0

Renesas Electronics America

IGBT 600V 85A 297.6W TO247A

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 85A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 45A
• Power - Max: 297.6W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 58ns/131ns
• Test Condition: 400V, 30A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 90ns
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247A

封装: TO-247-3

IXGH20N120IH

IXYS

IGBT 1200V TO-247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

封装: TO-247-3

AOK10B60D

Alpha & Omega Semiconductor Inc.

IGBT 600V 20A 163W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 40A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A
• Power - Max: 163W
• Switching Energy: 260µJ (on), 70µJ (off)
• Input Type: Standard
• Gate Charge: 17.4nC
• Td (on/off) @ 25°C: 10ns/72ns
• Test Condition: 400V, 10A, 30 Ohm, 15V
• Reverse Recovery Time (trr): 105ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

封装: TO-247-3

STGB10NB40LZT4

STMicroelectronics

IGBT 440V 20A 150W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 440V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 40A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 4.5V, 10A
• Power - Max: 150W
• Switching Energy: 2.4mJ (on), 5mJ (off)
• Input Type: Standard
• Gate Charge: 28nC
• Td (on/off) @ 25°C: 1.3µs/8µs
• Test Condition: 328V, 10A, 1 kOhm, 5V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

STGP3NC120HD

STMicroelectronics

IGBT 1200V 14A 75W TO220

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 14A
• Current - Collector Pulsed (Icm): 20A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
• Power - Max: 75W
• Switching Energy: 236µJ (on), 290µJ (off)
• Input Type: Standard
• Gate Charge: 24nC
• Td (on/off) @ 25°C: 15ns/118ns
• Test Condition: 800V, 3A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 51ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220

封装: TO-220-3

IKD03N60RF

Infineon Technologies

IGBT 600V 5A 53.6W TO252-3

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 5A
• Current - Collector Pulsed (Icm): 7.5A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A
• Power - Max: 53.6W
• Switching Energy: 90µJ
• Input Type: Standard
• Gate Charge: 17.1nC
• Td (on/off) @ 25°C: 10ns/128ns
• Test Condition: 400V, 2.5A, 68 Ohm, 15V
• Reverse Recovery Time (trr): 31ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

FGB20N60SFD_F085

Fairchild/ON Semiconductor

IGBT 600V 40A 208W D2PAK

• IGBT Type: Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 20A
• Power - Max: 208W
• Switching Energy: 310µJ (on), 130µJ (off)
• Input Type: Standard
• Gate Charge: 63nC
• Td (on/off) @ 25°C: 10ns/90ns
• Test Condition: 400V, 20A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 111ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK (TO-263)

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

STGB14NC60KDT4

STMicroelectronics

IGBT 600V 25A 80W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 25A
• Current - Collector Pulsed (Icm): 50A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
• Power - Max: 80W
• Switching Energy: 82µJ (on), 155µJ (off)
• Input Type: Standard
• Gate Charge: 34.4nC
• Td (on/off) @ 25°C: 22.5ns/116ns
• Test Condition: 390V, 7A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 37ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXA20RG1200DHG-TUB

IXYS

IGBT 1200V 32A 125W SMPD

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 32 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
• Power - Max: 125 W
• Switching Energy: 1.55mJ (on), 1.7mJ (off)
• Input Type: Standard
• Gate Charge: 48 nC
• Td (on/off) @ 25°C: -
• Test Condition: 600V, 15A, 56Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 9-SMD Module
• Supplier Device Package: ISOPLUS-SMPD™.B

封装: -

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SIGC18T60SNCX1SA4

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 20 A
• Current - Collector Pulsed (Icm): 60 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 36ns/250ns
• Test Condition: 400V, 20A, 16Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封装: -

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RGCL80TS60DGC11

Rohm Semiconductor

IGBT TRNCH FIELD 600V 65A TO247N

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 65 A
• Current - Collector Pulsed (Icm): 160 A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
• Power - Max: 148 W
• Switching Energy: 1.11mJ (on), 1.68mJ (off)
• Input Type: Standard
• Gate Charge: 98 nC
• Td (on/off) @ 25°C: 53ns/227ns
• Test Condition: 400V, 40A, 10Ohm, 15V
• Reverse Recovery Time (trr): 58 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247N

封装: -

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HGT1S15N120C3

Harris Corporation

35A, 1200V, N-CHANNEL IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 35 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 15A
• Power - Max: 164 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 100 nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
• Supplier Device Package: TO-262 (I2PAK)

封装: -

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IGTM10N50

Harris Corporation

N CHANNEL IGBT FOR SWITCHING APP

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 500 V
• Current - Collector (Ic) (Max): 10 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-204AA, TO-3
• Supplier Device Package: TO-3

封装: -

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AIKBE50N65RF5ATMA1

Infineon Technologies

IGBT TRENCH FS 650V 96A TO263-7

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 96 A
• Current - Collector Pulsed (Icm): 150 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
• Power - Max: 326 W
• Switching Energy: 0.12mJ (on), 0.09mJ (off)
• Input Type: Standard
• Gate Charge: 108 nC
• Td (on/off) @ 25°C: 16.8ns/136ns
• Test Condition: 400V, 25A, 9Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
• Supplier Device Package: PG-TO263-7-U04

封装: -

AOK20B120D1

Alpha & Omega Semiconductor Inc.

IGBT 1200V 20A TO-247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 40 A
• Current - Collector Pulsed (Icm): 80 A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
• Power - Max: 340 W
• Switching Energy: 940µJ (off)
• Input Type: Standard
• Gate Charge: 67.5 nC
• Td (on/off) @ 25°C: -/152ns
• Test Condition: 600V, 20A, 15Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

封装: -

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SIGC07T60SNCX7SA2

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 6 A
• Current - Collector Pulsed (Icm): 18 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 24ns/248ns
• Test Condition: 400V, 6A, 50Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封装: -

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MGP7N60ED

onsemi

IGBT, 10A, 600V, N-CHANNEL

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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IXGP28N60A3

IXYS

IGBT

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 75 A
• Current - Collector Pulsed (Icm): 170 A
• Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 24A
• Power - Max: 190 W
• Switching Energy: 700µJ (on), 2.4mJ (off)
• Input Type: Standard
• Gate Charge: 66 nC
• Td (on/off) @ 25°C: 18ns/300ns
• Test Condition: 480V, 24A, 10Ohm, 15V
• Reverse Recovery Time (trr): 26 ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3

封装: -

RGTH80TS65GC13

Rohm Semiconductor

IGBT TRNCH FIELD 650V 70A TO247G

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 70 A
• Current - Collector Pulsed (Icm): 160 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
• Power - Max: 234 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 79 nC
• Td (on/off) @ 25°C: 34ns/120ns
• Test Condition: 400V, 40A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247G

封装: -

FGY75T120SQDN

onsemi

IGBT 1200V 75A UFS

• IGBT Type: Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 150 A
• Current - Collector Pulsed (Icm): 300 A
• Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
• Power - Max: 790 W
• Switching Energy: 6.25mJ (on), 1.96mJ (off)
• Input Type: Standard
• Gate Charge: 399 nC
• Td (on/off) @ 25°C: 64ns/332ns
• Test Condition: 600V, 75A, 10Ohm, 15V
• Reverse Recovery Time (trr): 99 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3 Variant
• Supplier Device Package: TO-247-3

封装: -