晶体管 - UGBT，MOSFET - 单

NGTB30N120IHLWG

ON Semiconductor

IGBT 1200V 30A TO247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 320A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
• Power - Max: 260W
• Switching Energy: 1mJ (off)
• Input Type: Standard
• Gate Charge: 420nC
• Td (on/off) @ 25°C: -/360ns
• Test Condition: 600V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

封装: TO-247-3

RJH1BF6RDPQ-80#T2

Renesas Electronics America

IGBT 1100V 55A 227.2W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1100V
• Current - Collector (Ic) (Max): 55A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 55A
• Power - Max: 227.2W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

封装: TO-247-3

FIO50-12BD

IXYS

IGBT 1200V 50A 200W I4PAC5

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 50A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 30A
• Power - Max: 200W
• Switching Energy: 4.6mJ (on), 2.2mJ (off)
• Input Type: Standard
• Gate Charge: 150nC
• Td (on/off) @ 25°C: -
• Test Condition: 600V, 30A, 39 Ohm, 15V
• Reverse Recovery Time (trr): 150ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: i4-Pac?-5
• Supplier Device Package: ISOPLUS i4-PAC?

封装: i4-Pac?-5

IGW20N60H3FKSA1

Infineon Technologies

IGBT 600V 40A 170W TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 80A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
• Power - Max: 170W
• Switching Energy: 800µJ
• Input Type: Standard
• Gate Charge: 120nC
• Td (on/off) @ 25°C: 17ns/194ns
• Test Condition: 400V, 20A, 14.6 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

封装: TO-247-3

IGP06N60TXKSA1

Infineon Technologies

IGBT 600V 12A 88W TO220-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 12A
• Current - Collector Pulsed (Icm): 18A
• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
• Power - Max: 88W
• Switching Energy: 200µJ
• Input Type: Standard
• Gate Charge: 42nC
• Td (on/off) @ 25°C: 9ns/130ns
• Test Condition: 400V, 6A, 23 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: PG-TO220-3

封装: TO-220-3

IXGH25N120

IXYS

IGBT 1200V 50A 200W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 50A
• Current - Collector Pulsed (Icm): 100A
• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
• Power - Max: 200W
• Switching Energy: 11mJ (off)
• Input Type: Standard
• Gate Charge: 130nC
• Td (on/off) @ 25°C: 100ns/650ns
• Test Condition: 960V, 25A, 33 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

封装: TO-247-3

IXGK320N60B3

IXYS

IGBT 600V 500A 1700W TO264

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 500A
• Current - Collector Pulsed (Icm): 1200A
• Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
• Power - Max: 1700W
• Switching Energy: 2.7mJ (on), 3.5mJ (off)
• Input Type: Standard
• Gate Charge: 585nC
• Td (on/off) @ 25°C: 44ns/250ns
• Test Condition: 480V, 100A, 1 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: TO-264 (IXGK)

封装: TO-264-3, TO-264AA

IXGQ28N120B

IXYS

IGBT 1200V 50A 250W TO3P

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 50A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 28A
• Power - Max: 250W
• Switching Energy: 2mJ (off)
• Input Type: Standard
• Gate Charge: 92nC
• Td (on/off) @ 25°C: 30ns/180ns
• Test Condition: 960V, 28A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P

封装: TO-3P-3, SC-65-3

NGTB30N65IHL2WG

ON Semiconductor

IGBT 600V 70A 300W TO247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
• Power - Max: 300W
• Switching Energy: 200µJ (off)
• Input Type: Standard
• Gate Charge: 135nC
• Td (on/off) @ 25°C: -/145ns
• Test Condition: 400V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 430ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

封装: TO-247-3

FGM622S

Sanken

IGBT 600V 16A TO-3PF

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 25A
• Current - Collector Pulsed (Icm): 75A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
• Power - Max: 60W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 40nC
• Td (on/off) @ 25°C: 50ns/200ns
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: TO-3PF-3

封装: TO-3P-3 Full Pack

NGB8207ABNT4G

Littelfuse Inc.

IGBT 365V 20A 165W D2PAK3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 365V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 50A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 3.7V, 10A
• Power - Max: 165W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXYH40N65C3H1

IXYS

IGBT 650V 80A 300W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 180A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
• Power - Max: 300W
• Switching Energy: 860µJ (on), 400µJ (off)
• Input Type: Standard
• Gate Charge: 70nC
• Td (on/off) @ 25°C: 26ns/106ns
• Test Condition: 400V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 120ns
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXYH)

封装: TO-247-3

IXXK100N60C3H1

IXYS

IGBT 600V 170A 695W TO264

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 170A
• Current - Collector Pulsed (Icm): 340A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 70A
• Power - Max: 695W
• Switching Energy: 2mJ (on), 950µJ (off)
• Input Type: Standard
• Gate Charge: 150nC
• Td (on/off) @ 25°C: 30ns/90ns
• Test Condition: 360V, 70A, 2 Ohm, 15V
• Reverse Recovery Time (trr): 140ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA Variation
• Supplier Device Package: TO-264 (IXXK)

封装: TO-264-3, TO-264AA Variation

IKD06N60RATMA1

Infineon Technologies

IGBT 600V 12A 100W TO252

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 12A
• Current - Collector Pulsed (Icm): 18A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
• Power - Max: 100W
• Switching Energy: 110µJ (on), 220µJ (off)
• Input Type: Standard
• Gate Charge: 48nC
• Td (on/off) @ 25°C: 12ns/127ns
• Test Condition: 400V, 6A, 23 Ohm, 15V
• Reverse Recovery Time (trr): 68ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

STGW19NC60W

STMicroelectronics

IGBT 600V 42A 140W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 42A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
• Power - Max: 140W
• Switching Energy: 81µJ (on), 125µJ (off)
• Input Type: Standard
• Gate Charge: 53nC
• Td (on/off) @ 25°C: 25ns/90ns
• Test Condition: 390V, 12A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 Long Leads

封装: TO-247-3

IRG4PH50UPBF

Infineon Technologies

IGBT 1200V 45A 200W TO247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 45A
• Current - Collector Pulsed (Icm): 180A
• Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 24A
• Power - Max: 200W
• Switching Energy: 530µJ (on), 1.41mJ (off)
• Input Type: Standard
• Gate Charge: 160nC
• Td (on/off) @ 25°C: 35ns/200ns
• Test Condition: 960V, 24A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

封装: TO-247-3

STGF10NC60KD

STMicroelectronics

IGBT 600V 9A 25W TO220FP

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 9A
• Current - Collector Pulsed (Icm): 30A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
• Power - Max: 25W
• Switching Energy: 55µJ (on), 85µJ (off)
• Input Type: Standard
• Gate Charge: 19nC
• Td (on/off) @ 25°C: 17ns/72ns
• Test Condition: 390V, 5A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 22ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220FP

封装: TO-220-3 Full Pack

IPB133N12NM6ATMA1

Infineon Technologies

TRENCH >=100V

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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RGW50TK65DGVC11

Rohm Semiconductor

IGBT TRNCH FIELD 650V 30A TO3PFM

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 30 A
• Current - Collector Pulsed (Icm): 100 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
• Power - Max: 67 W
• Switching Energy: 390µJ (on), 430µJ (off)
• Input Type: Standard
• Gate Charge: 73 nC
• Td (on/off) @ 25°C: 35ns/102ns
• Test Condition: 400V, 25A, 10Ohm, 15V
• Reverse Recovery Time (trr): 92 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3PFM, SC-93-3
• Supplier Device Package: TO-3PFM

封装: -

IGW15N120H3FKSA1

Infineon Technologies

IGBT TRENCH FS 1200V 30A TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 30 A
• Current - Collector Pulsed (Icm): 60 A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
• Power - Max: 217 W
• Switching Energy: 1.55mJ
• Input Type: Standard
• Gate Charge: 75 nC
• Td (on/off) @ 25°C: 21ns/260ns
• Test Condition: 600V, 15A, 35Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3-1

封装: -

IXYH8N250CHV

IXYS

IGBT 2500V 29A TO247HV

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 2500 V
• Current - Collector (Ic) (Max): 29 A
• Current - Collector Pulsed (Icm): 70 A
• Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
• Power - Max: 280 W
• Switching Energy: 2.6mJ (on), 1.07mJ (off)
• Input Type: Standard
• Gate Charge: 45 nC
• Td (on/off) @ 25°C: 11ns/180ns
• Test Condition: 1250V, 8A, 15Ohm, 15V
• Reverse Recovery Time (trr): 5 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3 Variant
• Supplier Device Package: TO-247HV

封装: -

HGTH12N50C1D

Harris Corporation

12A, 500V, N-CHANNEL IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 500 V
• Current - Collector (Ic) (Max): 12 A
• Current - Collector Pulsed (Icm): 17.5 A
• Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 17.5A
• Power - Max: 75 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 19 nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): 100 ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-218-3 Isolated Tab, TO-218AC
• Supplier Device Package: TO-218 Isolated

封装: -

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IKFW50N60DH3EXKSA1

Infineon Technologies

IGBT TRENCH FS 600V 40A TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 40 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
• Power - Max: 130 W
• Switching Energy: 1.28mJ (on), 560µJ (off)
• Input Type: Standard
• Gate Charge: 160 nC
• Td (on/off) @ 25°C: 21ns/174ns
• Test Condition: 400V, 40A, 8Ohm, 15V
• Reverse Recovery Time (trr): 64 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3-AI

封装: -

IKD08N65ET6ARMA1

Infineon Technologies

IGBT TRENCH FS 650V 15A TO252-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 15 A
• Current - Collector Pulsed (Icm): 25 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 5A
• Power - Max: 47 W
• Switching Energy: 110µJ (on), 40µJ (off)
• Input Type: Standard
• Gate Charge: 17 nC
• Td (on/off) @ 25°C: 20ns/59ns
• Test Condition: 400V, 5A, 47Ohm, 15V
• Reverse Recovery Time (trr): 43 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3

封装: -

63-9019

Infineon Technologies

IGBT CHIP

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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RGW00TK65DGVC11

Rohm Semiconductor

IGBT TRNCH FIELD 650V 45A TO3PFM

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 45 A
• Current - Collector Pulsed (Icm): 200 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
• Power - Max: 89 W
• Switching Energy: 1.18mJ (on), 960µJ (off)
• Input Type: Standard
• Gate Charge: 141 nC
• Td (on/off) @ 25°C: 52ns/180ns
• Test Condition: 400V, 50A, 10Ohm, 15V
• Reverse Recovery Time (trr): 95 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3PFM, SC-93-3
• Supplier Device Package: TO-3PFM

封装: -

IKZA75N65RH5XKSA1

Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-4

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 300 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
• Power - Max: 395 W
• Switching Energy: 310µJ (on), 300µJ (off)
• Input Type: Standard
• Gate Charge: 168 nC
• Td (on/off) @ 25°C: 25ns/180ns
• Test Condition: 400V, 37.5A, 9Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-4
• Supplier Device Package: PG-TO247-4-3

封装: -

IKW40N65ET7XKSA1

Infineon Technologies

IGBT TRENCH FS 650V 76A TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 76 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 40A
• Power - Max: 230.8 W
• Switching Energy: 1.05mJ (on), 590µJ (off)
• Input Type: Standard
• Gate Charge: 235 nC
• Td (on/off) @ 25°C: 20ns/310ns
• Test Condition: 400V, 40A, 10Ohm, 15V
• Reverse Recovery Time (trr): 85 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

封装: -