晶体管 - UGBT，MOSFET - 单

IRG8B08N120KDPBF

Infineon Technologies

DIODE 1200V 8A TO-220

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 15A
• Current - Collector Pulsed (Icm): 15A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
• Power - Max: 89W
• Switching Energy: 300µJ (on), 300µJ (off)
• Input Type: Standard
• Gate Charge: 45nC
• Td (on/off) @ 25°C: 20ns/160ns
• Test Condition: 600V, 5A, 47 Ohm, 15V
• Reverse Recovery Time (trr): 50ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封装: TO-220-3

IRGP4620DPBF

Infineon Technologies

IGBT 600V 32A 140W TO247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 32A
• Current - Collector Pulsed (Icm): 36A
• Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
• Power - Max: 140W
• Switching Energy: 75µJ (on), 225µJ (off)
• Input Type: Standard
• Gate Charge: 25nC
• Td (on/off) @ 25°C: 31ns/83ns
• Test Condition: 400V, 12A, 22 Ohm, 15V
• Reverse Recovery Time (trr): 68ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

封装: TO-247-3

GT60N321(Q)

Toshiba Semiconductor and Storage

IGBT 1000V 60A 170W TO3P LH

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1000V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A
• Power - Max: 170W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 330ns/700ns
• Test Condition: -
• Reverse Recovery Time (trr): 2.5µs
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3PL
• Supplier Device Package: TO-3P(LH)

封装: TO-3PL

IXSH40N60B

IXYS

IGBT 600V 75A 280W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
• Power - Max: 280W
• Switching Energy: 1.8mJ (off)
• Input Type: Standard
• Gate Charge: 190nC
• Td (on/off) @ 25°C: 50ns/110ns
• Test Condition: 480V, 40A, 2.7 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXSH)

封装: TO-247-3

STGB3NB60KDT4

STMicroelectronics

IGBT 600V 10A 50W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 10A
• Current - Collector Pulsed (Icm): 24A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
• Power - Max: 50W
• Switching Energy: 30µJ (on), 58µJ (off)
• Input Type: Standard
• Gate Charge: 14nC
• Td (on/off) @ 25°C: 14ns/33ns
• Test Condition: 480V, 3A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 45ns
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AIKW40N65DH5XKSA1

Infineon Technologies

IC DISCRETE 650V TO247-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

AUIRGSL4062D1

Infineon Technologies

IGBT 600V 59A 246W TO-262

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 59A
• Current - Collector Pulsed (Icm): 72A
• Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 24A
• Power - Max: 246W
• Switching Energy: 532µJ (on), 311µJ (off)
• Input Type: Standard
• Gate Charge: 77nC
• Td (on/off) @ 25°C: 19ns/90ns
• Test Condition: 400V, 24A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 102ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
• Supplier Device Package: TO-262

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

IKP30N65F5XKSA1

Infineon Technologies

IGBT 650V TO220-3

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 55A
• Current - Collector Pulsed (Icm): 90A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
• Power - Max: 188W
• Switching Energy: 280µJ (on), 70µJ (off)
• Input Type: Standard
• Gate Charge: 65nC
• Td (on/off) @ 25°C: 19ns/170ns
• Test Condition: 400V, 15A, 23 Ohm, 15V
• Reverse Recovery Time (trr): 55ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: PG-TO-220-3

封装: TO-220-3

IRG4PH50KPBF

Infineon Technologies

IGBT 1200V 45A 200W TO247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 45A
• Current - Collector Pulsed (Icm): 90A
• Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 24A
• Power - Max: 200W
• Switching Energy: 1.21mJ (on), 2.25mJ (off)
• Input Type: Standard
• Gate Charge: 180nC
• Td (on/off) @ 25°C: 36ns/200ns
• Test Condition: 960V, 24A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

封装: TO-247-3

AIHD15N60RATMA1

Infineon Technologies

IC DISCRETE 600V TO252-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 45A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
• Power - Max: 250W
• Switching Energy: 370µJ (on), 530µJ (off)
• Input Type: Standard
• Gate Charge: 90nC
• Td (on/off) @ 25°C: 16ns/183ns
• Test Condition: 400V, 15A, 15 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

IXGH16N170AH1

IXYS

IGBT 1700V 16A 190W TO247

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1700V
• Current - Collector (Ic) (Max): 16A
• Current - Collector Pulsed (Icm): 40A
• Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A
• Power - Max: 190W
• Switching Energy: 900µJ (off)
• Input Type: Standard
• Gate Charge: 65nC
• Td (on/off) @ 25°C: 36ns/160ns
• Test Condition: 850V, 16A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 230ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

封装: TO-247-3

IXGT50N90B2D1

IXYS

IGBT 900V 75A 400W TO268

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 900V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
• Power - Max: 400W
• Switching Energy: 4.7mJ (off)
• Input Type: Standard
• Gate Charge: 135nC
• Td (on/off) @ 25°C: 20ns/350ns
• Test Condition: -
• Reverse Recovery Time (trr): 200ns
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXGH10N170

IXYS

IGBT 1700V 20A 110W TO247

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1700V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 70A
• Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 10A
• Power - Max: 110W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 32nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

封装: TO-247-3

FGH40T65UQDF_F155

Fairchild/ON Semiconductor

650V FS4 TRENCH IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

IXYH30N65C3

IXYS

IGBT 650V 60A 270W TO247AD

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 118A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
• Power - Max: 270W
• Switching Energy: 1mJ (on), 270µJ (off)
• Input Type: Standard
• Gate Charge: 44nC
• Td (on/off) @ 25°C: 21ns/75ns
• Test Condition: 400V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXYH)

封装: TO-247-3

STGB19NC60KDT4

STMicroelectronics

IGBT 600V 35A 125W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 35A
• Current - Collector Pulsed (Icm): 75A
• Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 12A
• Power - Max: 125W
• Switching Energy: 165µJ (on), 255µJ (off)
• Input Type: Standard
• Gate Charge: 55nC
• Td (on/off) @ 25°C: 30ns/105ns
• Test Condition: 480V, 12A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 31ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FGB3245G2_F085

Fairchild/ON Semiconductor

ECOSPARK2 450V IGNITION IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 450V
• Current - Collector (Ic) (Max): 23A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
• Power - Max: 150W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: 23nC
• Td (on/off) @ 25°C: 900ns/5.4µs
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

STGD7NB60ST4

STMicroelectronics

IGBT 600V 15A 55W DPAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 15A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 7A
• Power - Max: 55W
• Switching Energy: 3.5mJ (off)
• Input Type: Standard
• Gate Charge: 33nC
• Td (on/off) @ 25°C: 700ns/-
• Test Condition: 480V, 7A, 1 kOhm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: DPAK

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

RGTH40TS65GC11

Rohm Semiconductor

IGBT 650V 40A 144W TO-247N

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 80A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
• Power - Max: 144W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 40nC
• Td (on/off) @ 25°C: 22ns/73ns
• Test Condition: 400V, 20A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247N

封装: TO-247-3

IKD03N60RFATMA1

Infineon Technologies

IGBT 600V 6.5A 53.6W TO252

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 6.5A
• Current - Collector Pulsed (Icm): 7.5A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A
• Power - Max: 53.6W
• Switching Energy: 50µJ (on), 40µJ (off)
• Input Type: Standard
• Gate Charge: 17.1nC
• Td (on/off) @ 25°C: 10ns/128ns
• Test Condition: 400V, 2.5A, 68 Ohm, 15V
• Reverse Recovery Time (trr): 31ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

ISL9V5045S3ST_F085

Fairchild/ON Semiconductor

IGBT 480V 51A 300W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 480V
• Current - Collector (Ic) (Max): 51A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
• Power - Max: 300W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: 32nC
• Td (on/off) @ 25°C: -/10.8µs
• Test Condition: 300V, 1 kOhm, 5V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRG4PC30FDPBF

Infineon Technologies

IGBT 600V 31A 100W TO247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 31A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
• Power - Max: 100W
• Switching Energy: 630µJ (on), 1.39mJ (off)
• Input Type: Standard
• Gate Charge: 51nC
• Td (on/off) @ 25°C: 42ns/230ns
• Test Condition: 480V, 17A, 23 Ohm, 15V
• Reverse Recovery Time (trr): 42ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

封装: TO-247-3

AOK40B65HQ3

Alpha & Omega Semiconductor Inc.

IGBT 40A

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
• Power - Max: 312 W
• Switching Energy: 1.19mJ (on), 380µJ (off)
• Input Type: Standard
• Gate Charge: 61 nC
• Td (on/off) @ 25°C: 31ns/110ns
• Test Condition: 400V, 40A, 7.5Ohm, 15V
• Reverse Recovery Time (trr): 106 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

封装: -

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IKQ120N120CS7XKSA1

Infineon Technologies

IGBT TRENCH FS 1200V 216A TO247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 216 A
• Current - Collector Pulsed (Icm): 360 A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
• Power - Max: 1004 W
• Switching Energy: 10.3mJ (on), 5.72mJ (off)
• Input Type: Standard
• Gate Charge: 710 nC
• Td (on/off) @ 25°C: 44ns/205ns
• Test Condition: -
• Reverse Recovery Time (trr): 205 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3-46

封装: -

STGWA60V60DWFAG

STMicroelectronics

AUTOMOTIVE-GRADE TRENCH FIELD-ST

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 240 A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
• Power - Max: 375 W
• Switching Energy: 1.02mJ (on), 370µJ (off)
• Input Type: Standard
• Gate Charge: 314 nC
• Td (on/off) @ 25°C: 35ns/190ns
• Test Condition: 400V, 60A, 4.7Ohm, 15V
• Reverse Recovery Time (trr): 200 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 Long Leads

封装: -

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GT50J341-Q

Toshiba Semiconductor and Storage

PB-F IGBT / TRANSISTOR TO-3PN IC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 50 A
• Current - Collector Pulsed (Icm): 100 A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
• Power - Max: 200 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P(N)

封装: -

XGD8290TI

Littelfuse Inc.

IGBT N-CH 20A D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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IXYN300N65A3

IXYS

DISC IGBT XPT-GENX3 SOT-227B(MIN

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 470 A
• Current - Collector Pulsed (Icm): 1600 A
• Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
• Power - Max: 1500 W
• Switching Energy: 7.8mJ (on), 4.7mJ (off)
• Input Type: Standard
• Gate Charge: 565 nC
• Td (on/off) @ 25°C: 42ns/190ns
• Test Condition: 400V, 100A, 1Ohm, 15V
• Reverse Recovery Time (trr): 125 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227B

封装: -

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