晶体管 - UGBT，MOSFET - 单

IRG7PH44K10D-EPBF

Infineon Technologies

IGBT 1200V 70A 320W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 70A
• Current - Collector Pulsed (Icm): 100A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
• Power - Max: 320W
• Switching Energy: 2.1mJ (on), 1.3mJ (off)
• Input Type: Standard
• Gate Charge: 200nC
• Td (on/off) @ 25°C: 75ns/315ns
• Test Condition: 600V, 25A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 130ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

封装: TO-247-3

IRG7PH37K10D-EPBF

Infineon Technologies

IGBT 1200V 45A 216W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 45A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
• Power - Max: 216W
• Switching Energy: 1mJ (on), 600µJ (off)
• Input Type: Standard
• Gate Charge: 135nC
• Td (on/off) @ 25°C: 50ns/240ns
• Test Condition: 600V, 15A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 120ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

封装: TO-247-3

IRG4RC20FTRL

Infineon Technologies

IGBT 600V 22A 66W DPAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 22A
• Current - Collector Pulsed (Icm): 44A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
• Power - Max: 66W
• Switching Energy: 190µJ (on), 920µJ (off)
• Input Type: Standard
• Gate Charge: 27nC
• Td (on/off) @ 25°C: 26ns/194ns
• Test Condition: 480V, 12A, 50 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

IXGK50N60BD1

IXYS

IGBT 600V 75A 300W TO264AA

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
• Power - Max: 300W
• Switching Energy: 1.5mJ (off)
• Input Type: Standard
• Gate Charge: 110nC
• Td (on/off) @ 25°C: 50ns/200ns
• Test Condition: 480V, 50A, 2.7 Ohm, 15V
• Reverse Recovery Time (trr): 50ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: TO-264 (IXGK)

封装: TO-264-3, TO-264AA

IRG4BC15UD-LPBF

Infineon Technologies

IGBT 600V 14A 49W TO262

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 14A
• Current - Collector Pulsed (Icm): 42A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A
• Power - Max: 49W
• Switching Energy: 240µJ (on), 260µJ (off)
• Input Type: Standard
• Gate Charge: 23nC
• Td (on/off) @ 25°C: 17ns/160ns
• Test Condition: 480V, 7.8A, 75 Ohm, 15V
• Reverse Recovery Time (trr): 28ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
• Supplier Device Package: TO-262

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

IXXH40N65B4H1

IXYS

IGBT 650V 120A 455W TO247AD

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 120A
• Current - Collector Pulsed (Icm): 240A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
• Power - Max: 455W
• Switching Energy: 1.4mJ (on), 560µJ (off)
• Input Type: Standard
• Gate Charge: 77nC
• Td (on/off) @ 25°C: 28ns/144ns
• Test Condition: 400V, 40A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 120ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

封装: TO-247-3

IXGH64N60A3

IXYS

IGBT 600V 460W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): 400A
• Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 50A
• Power - Max: 460W
• Switching Energy: 1.42mJ (on), 3.28mJ (off)
• Input Type: Standard
• Gate Charge: 167nC
• Td (on/off) @ 25°C: 26ns/268ns
• Test Condition: 480V, 50A, 3 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

封装: TO-247-3

HGTG7N60A4D

Fairchild/ON Semiconductor

IGBT 600V 34A 125W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 34A
• Current - Collector Pulsed (Icm): 56A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
• Power - Max: 125W
• Switching Energy: 55µJ (on), 60µJ (off)
• Input Type: Standard
• Gate Charge: 37nC
• Td (on/off) @ 25°C: 11ns/100ns
• Test Condition: 390V, 7A, 25 Ohm, 15V
• Reverse Recovery Time (trr): 34ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

封装: TO-247-3

IRGP4062DPBF

Infineon Technologies

IGBT 600V 48A 250W TO247AC

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 48A
• Current - Collector Pulsed (Icm): 72A
• Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
• Power - Max: 250W
• Switching Energy: 115µJ (on), 600µJ (off)
• Input Type: Standard
• Gate Charge: 50nC
• Td (on/off) @ 25°C: 41ns/104ns
• Test Condition: 400V, 24A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 89ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

封装: TO-247-3

IRG4BC40W-LPBF

Infineon Technologies

IGBT 600V 40A 160W TO262

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 160A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
• Power - Max: 160W
• Switching Energy: 110µJ (on), 230µJ (off)
• Input Type: Standard
• Gate Charge: 98nC
• Td (on/off) @ 25°C: 27ns/100ns
• Test Condition: 480V, 20A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
• Supplier Device Package: TO-262

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

STGWA15S120DF3

STMicroelectronics

IGBT 1200V 15A TO247-3L

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
• Power - Max: 259W
• Switching Energy: 540µJ (on), 1.38mJ (off)
• Input Type: Standard
• Gate Charge: 53nC
• Td (on/off) @ 25°C: 23ns/140ns
• Test Condition: 600V, 15A, 22 Ohm, 15V
• Reverse Recovery Time (trr): 270ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

封装: TO-247-3

RGT50TS65DGC11

Rohm Semiconductor

IGBT 650V 48A 174W TO-247N

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 48A
• Current - Collector Pulsed (Icm): 75A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
• Power - Max: 174W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 49nC
• Td (on/off) @ 25°C: 27ns/88ns
• Test Condition: 400V, 25A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 58ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247N

封装: TO-247-3

STGF10H60DF

STMicroelectronics

IGBT 600V 20A 30W TO220FP

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 40A
• Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
• Power - Max: 30W
• Switching Energy: 83µJ (on), 140µJ (off)
• Input Type: Standard
• Gate Charge: 57nC
• Td (on/off) @ 25°C: 19.5ns/103ns
• Test Condition: 400V, 10A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 107ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220FP

封装: TO-220-3 Full Pack

STGF7NC60HD

STMicroelectronics

IGBT 600V 10A 25W TO220FP

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 10A
• Current - Collector Pulsed (Icm): 50A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
• Power - Max: 25W
• Switching Energy: 95µJ (on), 115µJ (off)
• Input Type: Standard
• Gate Charge: 35nC
• Td (on/off) @ 25°C: 18.5ns/72ns
• Test Condition: 390V, 7A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 37ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220FP

封装: TO-220-3 Full Pack

SGS10N60RUFDTU

Fairchild/ON Semiconductor

IGBT 600V 16A 55W TO220F

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 16A
• Current - Collector Pulsed (Icm): 30A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A
• Power - Max: 55W
• Switching Energy: 141µJ (on), 215µJ (off)
• Input Type: Standard
• Gate Charge: 30nC
• Td (on/off) @ 25°C: 15ns/36ns
• Test Condition: 300V, 10A, 20 Ohm, 15V
• Reverse Recovery Time (trr): 60ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220F

封装: TO-220-3 Full Pack

IHW30N160R2

Infineon Technologies

IGBT 1600V 60A 312W TO247-3

• IGBT Type: NPT, Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1600V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 90A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
• Power - Max: 312W
• Switching Energy: 4.37mJ
• Input Type: Standard
• Gate Charge: 94nC
• Td (on/off) @ 25°C: -/525ns
• Test Condition: 600V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

封装: TO-247-3

STGW20NC60VD

STMicroelectronics

IGBT 600V 60A 200W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
• Power - Max: 200W
• Switching Energy: 220µJ (on), 330µJ (off)
• Input Type: Standard
• Gate Charge: 100nC
• Td (on/off) @ 25°C: 31ns/100ns
• Test Condition: 390V, 20A, 3.3 Ohm, 15V
• Reverse Recovery Time (trr): 44ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

封装: TO-247-3

IXGM20N60

IXYS

IGBT 600V 40A TO-204AE

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 40 A
• Current - Collector Pulsed (Icm): 80 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
• Power - Max: 150 W
• Switching Energy: 2mJ (on), 3.2mJ (off)
• Input Type: Standard
• Gate Charge: 120 nC
• Td (on/off) @ 25°C: 100ns/600ns
• Test Condition: 480V, 20A, 82Ohm, 15V
• Reverse Recovery Time (trr): 200 ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-204AE
• Supplier Device Package: TO-204AE

封装: -

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RGW60TK65GVC11

Rohm Semiconductor

IGBT TRNCH FIELD 650V 33A TO3PFM

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 33 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
• Power - Max: 72 W
• Switching Energy: 480µJ (on), 490µJ (off)
• Input Type: Standard
• Gate Charge: 84 nC
• Td (on/off) @ 25°C: 37ns/114ns
• Test Condition: 400V, 30A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3PFM, SC-93-3
• Supplier Device Package: TO-3PFM

封装: -

FGH40T65UQDF-F155

onsemi

FS4TIGBT TO247 40A 650V

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 1.67V @ 15V, 40A
• Power - Max: 231 W
• Switching Energy: 989µJ (on), 310µJ (off)
• Input Type: Standard
• Gate Charge: 306 nC
• Td (on/off) @ 25°C: 32ns/271ns
• Test Condition: 400V, 40A, 6Ohm, 15V
• Reverse Recovery Time (trr): 89 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

封装: -

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FGH60N60UFDTU-F085

onsemi

IGBT 600V 120A 298W TO247

• IGBT Type: Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 120 A
• Current - Collector Pulsed (Icm): 180 A
• Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
• Power - Max: 298 W
• Switching Energy: 2.47mJ (on), 810µJ (off)
• Input Type: Standard
• Gate Charge: 192 nC
• Td (on/off) @ 25°C: 29ns/138ns
• Test Condition: 400V, 60A, 5Ohm, 15V
• Reverse Recovery Time (trr): 76 ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

封装: -

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FGD3440G2-F085

onsemi

IGBT 400V 26.9A TO252AA

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 400 V
• Current - Collector (Ic) (Max): 26.9 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.2V @ 4V, 6A
• Power - Max: 166 W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: 24 nC
• Td (on/off) @ 25°C: -/5.3µs
• Test Condition: 300V, 6.5A, 1kOhm, 5V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA

封装: -

ISL9V3036S3ST_SB82029A

Fairchild Semiconductor

IGBT, 360V, 17A, 1.58V, 300MJ, D

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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APT50GT120LRG

Microchip Technology

IGBT NPT 1200V 50A TO264

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 50 A
• Current - Collector Pulsed (Icm): 150 A
• Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
• Power - Max: 625 W
• Switching Energy: -, 2.33mJ (off)
• Input Type: Standard
• Gate Charge: 340 nC
• Td (on/off) @ 25°C: 24ns/230ns
• Test Condition: 800V, 50A, 4.7Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: TO-264 (L)

封装: -

RBN40H65T1FPQ-A0-CB0

Renesas Electronics Corporation

IGBT TRENCH 650V 80A TO247A

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
• Power - Max: 185 W
• Switching Energy: 620µJ (on), 520µJ (off)
• Input Type: Standard
• Gate Charge: 28 nC
• Td (on/off) @ 25°C: 22ns/96ns
• Test Condition: 400V, 40A, 16Ohm, 15V
• Reverse Recovery Time (trr): 55 ns
• Operating Temperature: 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247A

封装: -

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RJP3047ADPK-80-T2

Renesas Electronics Corporation

HIGH SPEED IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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BIDW20N60T

Bourns Inc.

IGBT TRENCH FS 600V 40A TO247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 40 A
• Current - Collector Pulsed (Icm): 60 A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
• Power - Max: 192 W
• Switching Energy: 1mJ (on), 300µJ (off)
• Input Type: Standard
• Gate Charge: 52 nC
• Td (on/off) @ 25°C: 19ns/48ns
• Test Condition: 400V, 20A, 10Ohm, 15V
• Reverse Recovery Time (trr): 33.7 ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

封装: -

IXBT2N250-TR

IXYS

IGBT 2500V 5A TO268

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 2500 V
• Current - Collector (Ic) (Max): 5 A
• Current - Collector Pulsed (Icm): 13 A
• Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 2A
• Power - Max: 32 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 10.6 nC
• Td (on/off) @ 25°C: 30ns/70ns
• Test Condition: 2000V, 2A, 47Ohm, 15V
• Reverse Recovery Time (trr): 920 ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

封装: -

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